SI5906DU Datasheet PDF - Vishay Siliconix


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SI5906DU
Vishay Siliconix

Part Number SI5906DU
Description Dual N-Channel 30-V (D-S) MOSFET
Page 10 Pages

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Si5906DU
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.031 at VGS = 10 V
30
0.040 at VGS = 4.5 V
ID (A)a
6
6
Qg (Typ.)
8 nC
PowerPAK ChipFET Dual
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
3.0 mm
1.8 mm
APPLICATIONS
Marking Code
• Network
D1
• System Power DC/DC
D2
CD XXX
Lot Traceability
and Date Code
Part # Code
G1
G2
Bottom View
Ordering Information: Si5906DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
6a
6a
6a, b, c
5.3b, c
25
6a
1.9b, c
10.4
6.7
2.3b, c
1.5b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
43
9.5
55 °C/W
12
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
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Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 4.8 A
VGS = 4.5 V, ID = 4.1 A
Forward Transconductancea
gfs VDS = 15 V, ID = 4.8 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 6.6 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 6.6 A
f = 1 MHz
VDD = 15 V, RL = 2.8 Ω
ID 5.3 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 2.8 Ω
ID 5.3 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 6 A, VGS = 0 V
IF = 5.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
20
0.3
Typ. Max. Unit
33
- 3.5
0.025
0.033
14
V
mV/°C
2.2
± 100
1
10
0.031
0.040
V
nA
µA
A
Ω
S
300
72 pF
34
5.7 8.6
2.9 4.4
nC
1.0
1.1
1.8 3.6
Ω
10 15
90 135
12 20
50 75
ns
5 10
15 25
12 20
5 10
6
A
25
0.8 1.2
V
12 20 ns
5 10 nC
6
ns
6
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25 10
20 VGS = 10 V thru 4 V
8
Si5906DU
Vishay Siliconix
15
10 VGS = 3 V
5
0
0.0
0.06
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.05
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0.00
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
400
350
300
250
200
150
100
50
0
0
Ciss
Coss
Crss
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
6
4
2
0
0.0
0.12
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.10
0.08
0.06
0.04
0.02
VGS = 4.5 V
VGS = 10 V
0.00
0
5 10 15 20 25 30 35 40
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 6.6 A
8
VDS = 7.5 V
6
VDS = 24 V
4
VDS = 15 V
2
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
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Si5906DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.8
ID = 4.8 A
1.6
VGS = 10 V
100
1.4 10
VGS = 4.5 V
1.2
1.0 1
TJ = 150 °C
TJ = 25 °C
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.06
ID = 4.8 A; TJ = 125 °C
0.04
0.02
ID = 4.8 A; TJ = 25 °C
ID = 1 A; TJ = 125 °C
ID = 1 A; TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
0.1
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
1.9
1.8
1.7
ID = 250 µA
1.6
1.5
1.4
1.3
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
100 µs
1 1 ms
10 ms
100 ms
0.1 1 s, 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65168
S09-1394-Rev. A, 20-Jul-09
Datasheet pdf - http://www.DataSheet4U.net/




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