SI5905DC Datasheet PDF - Vishay Siliconix


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SI5905DC
Vishay Siliconix

Part Number SI5905DC
Description Dual P-Channel 1.8-V (G-S) MOSFET
Page 4 Pages

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Si5905DC
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.090 @ VGS = --4.5 V
--8 0.130 @ VGS = --2.5 V
0.180 @ VGS = --1.8 V
1206-8 ChipFETt
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
Ordering Information: Si5905DC-T1
ID (A)
4.1
3.4
2.9
S1 S2
G1 G2
Marking Code
DB XX
Lot Traceability
and Date Code
Part # Code
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
--8
8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
4.1
2.9
--1.8
10
3.0
2.2
--0.9
2.1 1.1
1.1 0.6
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71066
S-21251—Rev. B, 05-Aug-02
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Si5905DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = --250 mA
VDS = 0 V, VGS = 8 V
VDS = --6.4 V, VGS = 0 V
VDS = --6.4 V, VGS = 0 V, TJ = 85_C
VDS --5 V, VGS = --4.5 V
VGS = --4.5 V, ID = --3 A
VGS = --2.5 V, ID = --2.5 A
VGS = --1.8 V, ID = --1.0 A
VDS = --5 V, ID = --3 A
IS = --0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = --4 V, VGS = --4.5 V, ID = --3 A
VDD = --4 V, RL = 4
ID --1 A, VGEN = --4.5 V, RG = 6
IF = --0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
--0.45
--10
0.075
0.110
0.150
7
--0.8
100
--1
--5
0.090
0.130
0.180
--1.2
V
nA
mA
A
S
V
5.5 9
0.5 nC
1.5
10 15
45 70
30 45 ns
10 15
30 60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
VGS = 5 thru 3 V
8
Output Characteristics
2.5 V
2V
6
4
1.5 V
2
1V
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS -- Drain-to-Source Voltage (V)
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2-2
3.0
Transfer Characteristics
10
TC = --55_C
8 25_C
6 125_C
4
2
0
0.0
0.5 1.0 1.5 2.0 2.5
VGS -- Gate-to-Source Voltage (V)
3.0
Document Number: 71066
S-21251—Rev. B, 05-Aug-02
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Si5905DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
1000
Capacitance
0.25
0.20
VGS = 1.8 V
0.15
0.10
VGS = 2.5 V
VGS = 4.5 V
0.05
0.00
0246
ID -- Drain Current (A)
5
VDS = 4 V
ID = 3 A
4
Gate Charge
8
10
800
Ciss
600
400
Coss
200
Crss
0
02468
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3 A
1.4
3 1.2
2 1.0
1 0.8
0
0123456
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20 ID = 3 A
TJ = 150_C
0.15
0.10
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD -- Source-to-Drain Voltage (V)
Document Number: 71066
S-21251—Rev. B, 05-Aug-02
0.05
0.00
0
1234
VGS -- Gate-to-Source Voltage (V)
5
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Si5905DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.3
ID = 250 mA
0.2
0.1
0.0
--0.1
40
30
20
10
--0.2
--50 --25
0 25 50 75 100 125 150
TJ -- Temperature (_C)
0
10--4 10--3
10--2
10--1
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10--4
Single Pulse
10--3
10--2
10--1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
90_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10--4
Single Pulse
10--3
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2-4
10--2
10--1
Square Wave Pulse Duration (sec)
1 10
Document Number: 71066
S-21251—Rev. B, 05-Aug-02
Datasheet pdf - http://www.DataSheet4U.net/




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