SI5905BDC Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI5905BDC
Vishay Siliconix

Part Number SI5905BDC
Description Dual P-Channel 8-V (D-S) MOSFET
Page 7 Pages

SI5905BDC datasheet pdf
View PDF for PC
SI5905BDC pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
New Product
Si5905BDC
Vishay Siliconix
Dual P-Channel 8-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.080 at VGS = - 4.5 V
- 8 0.117 at VGS = - 2.5 V
0.170 at VGS = - 1.8 V
ID (A)
- 4a
- 4a
- 3.5
Qg (Typ)
4 nC
FEATURES
• TrenchFET® Power MOSFETs
APPLICATIONS
• Load Switch for portable devices
RoHS
COMPLIANT
1206-8 ChipFET® (Dual)
1
S1
D1 G1
D1 S2
D2 G2
D2
Marking Code
DH XXX
Lot Traceability
and Date Code
Bottom View
Part #
Code
Ordering Information: Si5905BDC-T1-E3 (Lead (Pb)-free)
S1 S2
G1 G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
-8
±8
- 4a
- 4a
- 3.5b, c
- 2.8b, c
- 10
- 2.6
- 1.2b, c
3.1
2
1.5b, c
0.94b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
RthJA
RthJF
70
33
85
°C/W
40
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 120 °C/W.
Document Number: 74650
S-71343-Rev. A, 09-Jul-07
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si5905BDC
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 8 V, VGS = 0 V
VDS = - 8 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = 3.3 A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 2.5 V, ID = - 2.5 A
VGS = - 1.8 V, ID = - 0.6 A
Forward Transconductancea
gfs VDS = - 4 V, ID = - 3.3 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 4 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 4 V, VGS = - 8 V, ID = - 3.7 A
Gate-Source Charge
Qgs VDS = - 4 V, VGS = - 4.5 V, ID = - 3.7 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 4 V, RL = 1.3 Ω
ID - 3 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 4 V, RL = - 1.3 Ω
ID - 3 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 3 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min
-8
- 0.45
- 10
Typ
-7
2
0.066
0.097
0.140
8
350
140
85
7
4
0.65
0.75
5.5
10
25
20
7
5
10
17
10
- 0.8
55
25
14
41
Max Unit
V
mV/°C
- 1.0
± 100
-1
- 10
0.080
0.117
0.170
V
nA
µA
A
Ω
S
pF
11
6
nC
15
40
30
15
10
15
30
15
-4
- 10
- 1.2
85
50
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74650
S-71343-Rev. A, 09-Jul-07
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
5
VGS = 5 thru 2.5 V
8
2V
4
63
Si5905BDC
Vishay Siliconix
4
2
0
0.0
0.30
1.5 V
1V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.25
0.20
0.15
VGS = 1.8 V
VGS = 2.5 V
0.10
0.05
VGS = 4.5 V
0.00
0
2468
ID - Drain Current (A)
On Resistance vs. Drain Current
8
ID = 3.7 A
6
VDS = 4 V
4 VDS = 6.4 V
10
2
0
0246
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74650
S-71343-Rev. A, 09-Jul-07
8
2
1
0
0.0
600
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.5 1.0 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2.0
450
Ciss
300
150
0
0
Coss
Crss
246
VDS - Drain-to-Source Voltage (V)
Capacitance
8
1.5
ID = 3.3 A
1.4
1.3 VGS = 4.5 V, 2.5 V, 1.8 V
1.2
1.1
1.0
0.9
0.8
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si5905BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.30
ID = 3.3 A
0.25
0.20
TJ = 150 °C
TJ = 25 °C
0.15
0.10
0.05
TA = 125 °C
TA = 25 °C
1
0.0
0.7
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temp
1.2
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
0.6
ID = 250 µA
0.5
0.4
40
30
20
10
0.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
*Limited
by rDS(on)
1
0.1
0
0.0001 0.001 0.01 0.1 1 10
Time (sec)
Single Pulse Power
100 1000
1 ms
10 ms
100 ms
1s
10 s
dc
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
*VGS minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74650
S-71343-Rev. A, 09-Jul-07
Datasheet pdf - http://www.DataSheet4U.net/




SI5905BDC datasheet pdf
Download PDF
SI5905BDC pdf
View PDF for Mobile


Similiar Datasheets : SI5905BDC

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact