SI5904DC Datasheet PDF - Vishay Siliconix


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SI5904DC
Vishay Siliconix

Part Number SI5904DC
Description Dual N-Channel 2.5 V (G-S) MOSFET
Page 9 Pages

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Si5904DC
Vishay Siliconix
Dual N-Channel 2.5 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.075 at VGS = 4.5 V
0.134 at VGS = 2.5 V
ID (A)
± 4.2
± 3.1
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET®
1
S1
D1
D1
G1
S2
D2 G2
D2
Bottom View
Marking Code
CB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5904DC-T1-E3 (Lead (Pb)-free)
Si5904DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
± 4.2
± 3.0
± 3.1
± 2.2
Pulsed Drain Current
IDM ± 10
Continuous Source Current (Diode Conduction)a
IS 1.8 0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
2.1
1.1
1.1
0.6
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Soldering Recommendations (Peak Temperature)b, c
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
t5s
Steady State
RthJA
50
90
60
110 °C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
30
40
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
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Si5904DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 3.1 A
VGS = 2.5 V, ID = 2.3 A
Forward Transconductancea gfs VDS = 10 V, ID = 3.1 A
Diode Forward Voltagea
VSD IS = 0.9 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 3.1 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 10 V, RL = 10 Ω
ID 1 A, VGEN = 4.5 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 0.9 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
0.6
10
Typ.
Max.
1.5
± 100
1
5
0.065
0.115
8
0.8
0.075
0.143
1.2
Unit
V
nA
µA
A
Ω
S
V
46
0.6 nC
1.3
12 18
35 55
19 30 ns
9 15
40 80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
VGS = 5 V thru 3 V
8
10
8
2.5 V
66
TC = - 55 °C
25 °C
125 °C
4
2V
2
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
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Si5904DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30 600
0.25
0.20
500
Ciss
400
0.15
0.10
0.05
VGS = 2.5 V
VGS = 4.5 V
0.00
0
2468
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
300
200
100
Crss
0
0
Coss
4
8
12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
20
5
VDS = 10 V
ID = 3.1 A
4
1.6
VGS = 4.5 V
ID = 3.1 A
1.4
3 1.2
2 1.0
1 0.8
0
01234
Qg - Total Gate Charge (nC)
Gate Charge
10
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.20
TJ = 150 °C
TJ = 25 °C
0.15
0.10
0.05
ID = 3.1 A
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
0.00
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si5904DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4 50
0.2
ID = 250 µA
0.0
40
30
- 0.2 20
- 0.4 10
- 0.6
- 50 - 25
2
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1
Duty Cycle = 0.5
0
10-4 10-3
10-2 10-1 1 10
Time (s)
Single Pulse Power
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10-4
2
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71065.
www.vishay.com
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Document Number: 71065
S10-0548-Rev. D, 08-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/




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