SI5902DC Datasheet PDF - Vishay Siliconix


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SI5902DC
Vishay Siliconix

Part Number SI5902DC
Description Dual N-Channel 30-V (D-S) MOSFET
Page 4 Pages

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Si5902DC
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) ()
0.085 @ VGS = 10 V
0.143 @ VGS = 4.5 V
ID (A)
3.9
3.0
1206-8 ChipFETt
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
Ordering Information: Si5902DC-T1
D1 D2
Marking Code
CA XX
Lot Traceability
and Date Code
Part # Code
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
3.9
2.8
1.8
2.1
1.1
30
20
10
--55 to 150
260
2.9
2.1
0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
t 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
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Si5902DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = 20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 2.9 A
VGS = 4.5 V, ID = 2.2 A
VDS = 15 V, ID = 2.9 A
IS = 0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 10 V, ID = 2.9 A
VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, RG = 6
IF = 0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0 V
100
1
5
nA
mA
10 A
0.072
0.120
20
0.8
0.085
0.143
1.2
S
V
5 7.5
0.8 nC
1.0
7 11
12 18
12 18 ns
7 11
40 80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10 thru 5 V
8
10
8
6 4V 6
44
2 3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS -- Drain-to-Source Voltage (V)
2
0
0
Transfer Characteristics
TC = 125_C
25_C
--55_C
1234
VGS -- Gate-to-Source Voltage (V)
5
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Document Number: 71053
S-21251—Rev. A, 05-Aug-02
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Si5902DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
400
Capacitance
0.15
VGS = 4.5 V
Ciss
300
0.10
0.05
VGS = 10 V
0.00
0246
ID -- Drain Current (A)
Gate Charge
10
VDS = 15 V
ID = 2.9 A
8
8
6
4
2
10
200
Coss
100
Crss
0
0 6 12 18 24 30
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
VGS = 10 V
1.6 ID = 2.9 A
1.4
1.2
1.0
0.8
0
01234
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
5
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
TJ = 150_C
TJ = 25_C
0.15
ID = 2.9 A
0.10
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD -- Source-to-Drain Voltage (V)
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
0.00
0
2468
VGS -- Gate-to-Source Voltage (V)
10
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Si5902DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.2
ID = 250 mA
--0.0
--0.2
--0.4
--0.6
40
30
20
10
--0.8
--50 --25
0 25 50 75 100 125 150
TJ -- Temperature (_C)
0
10--4 10--3
10--2 10--1
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
10--4
Single Pulse
10--3
2
1
Duty Cycle = 0.5
10--2
10--1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
90_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
1000
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10--4
10--3
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10--2
10--1
Square Wave Pulse Duration (sec)
1 10
Document Number: 71053
S-21251—Rev. A, 05-Aug-02
Datasheet pdf - http://www.DataSheet4U.net/




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