SI5902BDC Datasheet PDF - Vishay Siliconix


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SI5902BDC
Vishay Siliconix

Part Number SI5902BDC
Description Dual N-Channel 30 V (D-S) MOSFET
Page 7 Pages

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Dual N-Channel 30 V (D-S) MOSFET
Si5902BDC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.065 at VGS = 10 V
30
0.100 at VGS = 4.5 V
ID (A)
4a
4a
Qg (Typ.)
2 nC
1206-8 ChipFET® (Dual)
1
S1
D1 G1
D1 S2
D2 G2
D2
Marking Code
CE XXX
Lot Traceability
and Date Code
Bottom View
Part #
Code
Ordering Information: Si5902BDC-T1-E3 (Lead (Pb)-free)
Si5902BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Applications
• DC/DC Converter
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
4a
3.8a
3.7b, c
2.6b, c
10
2.6
1.3b, c
3.12
2.0
1.5b, c
0.8b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
70
33
85 °C/W
40
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The 1206-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 120 °C/W.
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
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Si5902BDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 3.1 A
VGS = 4.5 V, ID = 1 A
Forward Transconductancea
gfs VDS = 15 V, ID = 3.1 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 3.6 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 3.6 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 5.8 Ω
ID 2.6 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 5.8 Ω
ID 2.6 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 2.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.5
10
Typ.
Max.
Unit
27
-5
0.053
0.081
5
V
mV/°C
3
± 100
1
5
0.065
0.100
V
nA
µA
A
Ω
S
220
50 pF
25
4.5 7
23
nC
0.7
0.7
3Ω
15 25
80 120
12 20
25 40
ns
48
12 20
10 15
5 10
2.6
A
10
0.8 1.2
V
30 50 ns
20 40 nC
23
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
Si5902BDC
Vishay Siliconix
16 VGS = 10 V thru 6 V
5V
12
8
4
0
0.0
0.20
4V
3V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.16
0.12
0.08
0.04
VGS = 4.5 V
VGS = 10 V
0.00
0
10
8
5 10 15
ID - Drain Current (A)
On Resistance vs. Drain Current
VDS = 15 V, ID = 3.6 A
20
6
4 VDS = 24 V, ID = 3.6 A
2
0
01234
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
5
4
3
TC = 25 °C
2
TC = 125 °C
1
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
300
250
Ciss
200
150
100
Coss
50
Crss
0
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.8
VGS = 10 V, 4.5 V
ID = 3.1 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5902BDC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 0.20
0.16
ID = 3.1 A
TJ = 150 °C
TJ = 25 °C
0.12
0.08
125 °C
25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Forward Diode Voltage vs. Temperature
1.2
2.4
2.2
ID = 250 µA
2.0
1.8
1.6
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
10
Limited by RDS(on)*
0.04
0
50
2468
VGS - Gate-to-Source Voltage (V)
RDS(on) vs. VGS vs. Temperature
10
40
30
20
10
0
0.0001 0.001 0.01 0.1
1
10
Time (s)
Single Pulse Power
100 1000
100 µs
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1
1 ms
10 ms
0.1 100 ms
0.01
0.01
TA = 25 °C
Single Pulse
0.1 1
BVDSS
Limited
10
1 s, 10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 70415
S10-0548-Rev. B, 08-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/




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