SI5519DU Datasheet PDF - Vishay Siliconix


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SI5519DU
Vishay Siliconix

Part Number SI5519DU
Description N- and P-Channel 20-V (D-S) MOSFET
Page 12 Pages

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Si5519DU
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel 20
0.036 at VGS = 4.5 V
0.063 at VGS = 2.5 V
0.064 at VGS = - 4.5 V
P-Channel - 20
0.095 at VGS = - 2.5 V
ID (A)a Qg (Typ.)
6.0
5.4 nC
6.0
- 6.0
- 6.0
6.0 nC
FEATURES
Halogen-free
TrenchFET® Power MOSFETs
APPLICATIONS
• Portable DC-DC Applications
RoHS
COMPLIANT
PowerPAK ChipFET Dual
1
D1 S2
S1 2
D1
8 D1
7
6
G1
D2
D2
5
3
S2 4
G2
G1
Marking Code
EB XXX
Lot Traceability
and Date Code
S1
G2
D2
Bottom View
Part #
Code
Ordering Information: Si5519DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
6.0a
6.0a
6.0a, b, c
4.9b, c
- 6.0a
- 6.0a
- 4.8b, c
- 3.8b, c
25
6.0a
1.9b, c
- 20
- 6.0a
- 1.9b, c
10.4 10.4
6.6
2.27b, c
1.45b, c
6.6
2.27b, c
1.45b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
43 55 43 55
9.5 12 9.5 12
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated)
as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequade bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
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Si5519DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 6.1 A
VGS = - 4.5 V, ID = - 4.8 A
VGS = 2.5 V, ID = 1.6 A
VGS = - 2.5 V, ID = - 1.05 A
VDS = 10 V, ID = 6.7 A
VDS = - 10 V, ID = - 4.8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 10 V, ID = 4.8 A
Qg VDS = - 10 V, VGS = - 10 V, ID = - 3.2 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 4.8 A
Qgs
P-Channel
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 3.2 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.6
- 0.6
25
- 10
Typ.a Max. Unit
V
20.74
- 18.2
4.0
1.83
1.8
- 1.8
100
- 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.030
0.053
0.052
0.078
15
9.5
0.036
0.064
0.063
0.095
Ω
S
660
475
108
135
65
100
11.65
11.7
5.4
6.0
1.48
1.05
1.4
2.1
5.2
9.8
17.5
18
8.1
9.0
pF
nC
Ω
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Document Number: 74406
S-81449-Rev. B, 23-Jun-08
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Si5519DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.04 Ω
ID 4.9 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
P-Channel
VDD = - 10 V, RL = 2.63 Ω
ID - 3.8 A, VGEN = - 4.5 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 3.1 A, VGS = 0 V
IS = - 2.2 A, VGS = 0 V
trr
N-Channel
Qrr IF = 3.1 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta P-Channel
IF = - 2.2 A, dI/dt = - 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.a Max.
5.5 8.25
4.5 6.8
15 22.5
11 16.5
22 33
25 37.5
69
8.5 12.8
0.8
- 0.8
14.4
20.6
8
7.2
10
6.6
4.4
14
8.6
- 8.6
25
- 20
1.2
- 1.2
21.6
31
12
11
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
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Si5519DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
VGS = 5 V thru 3.5 V
20
3.0
2.5
15
10
5
0
0
VGS = 3 V
VGS = 2.5 V
VGS = 2 V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
2.0
1.5
1.0
0.5
0.0
0.0
TJ = 125 °C
TJ = 25 °C
TJ = - 55 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.20 1000
0.16 800
0.12
0.08
VGS = 2.5 V
0.04
VGS = 4.5 V
0.00
0
5 10 15 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 6.7 A
8
VDS = 10 V
6
VGS = 16 V
4
600 Ciss
400
200 Coss
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V,
ID = 5 A
1.4
20
1.2
VGS = 2.5 V,
ID = 5 A
1.0
2 0.8
0
0
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2 4 6 8 10
Qg - Total Gate Charge (nC)
Gate Charge
12
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 74406
S-81449-Rev. B, 23-Jun-08
Datasheet pdf - http://www.DataSheet4U.net/




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