SI5517DU Datasheet PDF - Vishay Siliconix


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SI5517DU
Vishay Siliconix

Part Number SI5517DU
Description N- and P-Channel 20-V (D-S) MOSFET
Page 12 Pages

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Si5517DU
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS
RDS(on) (Ω)
0.039 at VGS = 4.5 V
20 0.045 at VGS = 2.5 V
0.055 at VGS = 1.8 V
0.072 at VGS = - 4.5 V
- 20 0.100 at VGS = - 2.5 V
0.131 at VGS = - 18 V
PowerPAK ChipFET Dual
ID (A)a
6
6
6
-6
-6
-6
Qg
6 nc
5.5 nc
1
S1 2
Marking Code
G1
D1
8
D1
7
D2
6 D2
EA
3
S2 4
G2
XXX
Lot Traceability
and Date Code
Part # Code
5
FEATURES
Halogen-free
• TrenchFET® Power MOSFETs
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS
• Complementary MOSFET for Portable Devices
- Ideal for Buck-Boost Circuits
D1 S2
G2
G1
Bottom View
Ordering Information: Si5517DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source-Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
±8
6a
6a
7.2b, c
5.8b, c
- 6a
- 6a
- 4.6b, c
- 3.7b, c
20 - 15
6.9 - 6.9
1.9b, c
- 1.9b, c
8.3 8.3
5.3 5.3
2.3b, c
1.5b, c
2.3b, c
1.5b, c
- 55 to 150
260
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
45 55 45 55
12 15 12 15
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W for both channels.
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
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Si5517DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = - 1 mA
N-Ch
P-Ch
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
N-Ch
P-Ch
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
N-Ch
P-Ch
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
N-Ch
P-Ch
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
N-Ch
P-Ch
VDS = 20 V, VGS = 0 V
N-Ch
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
N-Ch
On-State Drain Currentb
ID(on)
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
P-Ch
N-Ch
P-Ch
VGS = 4.5 V, ID = 4.4 A
N-Ch
VGS = - 4.5 V, ID = - 3.3 A
P-Ch
Drain-Source On-State Resistanceb
RDS(on)
VGS = 2.5 V, ID = 4.1 A
VGS = - 2.5 V, ID = - 2.8 A
N-Ch
P-Ch
VGS = 1.8 V, ID = 1.8 A
N-Ch
VGS = - 1.8 V, ID = - 0.76 A
P-Ch
Forward Transconductanceb
gfs
VDS = 10 V, ID = 4.4 A
VDS = - 10 V, ID = - 3.3 A
N-Ch
P-Ch
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
VDS = 10 V, VGS = 8 V, ID = 4.4 A N-Ch
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg VDS = - 10 V, VGS = - 8 V, ID = - 4.6 A P-Ch
N-Ch
N-Channel
P-Ch
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 4.4 A
P-Channel
N-Ch
P-Ch
Qgd
VDS = - 10 V, VGS = - 4.5 V, ID = - 1.8 A N-Ch
P-Ch
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
Min.
20
- 20
0.4
- 0.4
20
- 15
Typ.a Max.
Unit
V
17
- 20
- 2.6
2.4
mV/°C
1
-1
100
- 100
1
-1
10
- 10
V
nA
µA
A
0.032
0.060
0.037
0.083
0.0455
0.108
22
9
0.039
0.072
0.045
0.100
0.055
0.131
Ω
S
520
455
100
105
60
65
10.5 16
9.1 14
69
5.5 8.5
0.91
0.75
0.7
1.5
1.9
8
pF
nC
Ω
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Document Number: 73529
S-81449-Rev. B, 23-Jun-08
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Si5517DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID 3.6 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 2.7 Ω
ID - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.8 Ω
ID 3.6 A, VGEN = 8 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 2.7 Ω
ID - 3.7 A, VGEN = - 8 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
TC = 25 °C
N-Ch
P-Ch
Pulse Diode Forward Currenta
ISM
N-Ch
P-Ch
Body Diode Voltage
VSD
IS = 1.2 A, VGS = 0 V
IS = - 1.0 A, VGS = 0 V
N-Ch
P-Ch
Body Diode Reverse Recovery Time
trr
N-Ch
P-Ch
Body Diode Reverse Recovery Charge
Qrr
N-Channel
N-Ch
IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
N-Ch
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C P-Ch
tb
N-Ch
P-Ch
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Min.
Typ.a Max.
20
8
65
35
40
40
10
55
5
5
12
15
26
30
8
45
0.8
- 0.8
45
30
21
15
29
11
16
19
30
15
100
55
60
60
15
85
10
10
20
25
40
45
15
70
6.9
- 6.9
20
- 15
1.2
- 1.2
70
60
32
30
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
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Si5517DU
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 2.5 V thru 5 V
16 VGS = 2.5 V
VGS = 2 V
12 VGS = 1.5 V
10
8
6
8
4
VGS = 1 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.08
0.07
VGS = 4.5 V
0.06
0.05
0.04
VGS = 2.5 V
0.03
0.02
VGS = 1.8 V
0.01
0.00
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8
ID = 4.4 A
6
VDS = 10 V
4
VDS = 16 V
2
4
2
0
0.0
800
TC = 125 °C
25 °C
- 55 °C
0.3 0.6 0.9 1.2 1.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
Ciss
400
200
Coss
Crss
0
04
8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
1.4 ID = 4.4 A
1.2
1.0
0.8
20
0
0
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369
Qg - Total Gate Charge (nC)
Gate Charge
12
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73529
S-81449-Rev. B, 23-Jun-08
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