SI5515CDC Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI5515CDC
Vishay Siliconix

Part Number SI5515CDC
Description N- and P-Channel 20 V (D-S) MOSFET
Page 16 Pages

SI5515CDC datasheet pdf
View PDF for PC
SI5515CDC pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Si5515CDC
Vishay Siliconix
N- and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.036 at VGS = 4.5 V
N-Channel 20 0.041 at VGS = 2.5 V
0.050 at VGS = 1.8 V
0.100 at VGS = - 4.5 V
P-Channel - 20 0.120 at VGS = - 2.5 V
0.156 at VGS = - 1.8 V
ID (A)a
4g
4g
4g
- 4g
- 4g
- 3.8
Qg (Typ.)
6.5 nC
6.2 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
1206-8 ChipFET®
1
D1 S2
S1 Marking Code
D1
D1
G1
S2
EH XXX
Lot Traceability
and Date Code
G1
D2 G2
Part # Code
D2 1.8 mm
Bottom View
Ordering Information: Si5515CDC-T1-E3 (Lead (Pb)-free)
Si5515CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
±8
4g
4g
4b, c, g
4b, c, g
20
- 4g
- 3.8
- 3.1b, c
- 2.5b, c
- 10
2.6 - 2.6
1.7b, c
3.1
- 1.7b, c
3.1
2.0 2.0
2.1b, c
1.3b, c
1.3b, c
0.8b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
50 60 77 95
30 40 33 40
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si5515CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 6.0 A
VGS = - 4.5 V, ID = - 3.1 A
VGS = 2.5 V, ID = 5.6 A
VGS = - 2.5 V, ID = - 2.8 A
VGS = 1.8 V, ID = 5.1 A
VGS = - 1.8 V, ID = - 2.5 A
VDS = 10 V, ID = 6.0 A
VDS = - 10 V, ID = - 3.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 10 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 10 V, VGS = 5 V, ID = 6.0 A
Qg VDS = - 10 V, VGS = - 5 V, ID = - 3.1 A
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 6.0 A
Qgs
P-Channel
Qgd VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
- 20
0.4
- 0.4
20
- 10
0.66
1.22
Typ.a Max. Unit
V
18
- 19
- 2.7
2.5
mV/°C
0.8
- 0.8
100
- 100
1
-1
10
- 10
V
nA
µA
A
0.030
0.083
0.034
0.100
0.040
0.130
22.4
9.5
0.036
0.100
0.041
0.120
0.050
0.156
Ω
S
632
455
80
70
40
54
7.5 11.3
7 11
6.5 9.8
6.2 9.3
1.1
0.85
0.9
1.75
3.3 6.6
6.1 12.2
pF
nC
Ω
www.vishay.com
2
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si5515CDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 10 V, RL = 2.1 Ω
ID 4.8 A, VGEN = 8 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 10 V, RL = 4.2 Ω
ID - 2.4 A, VGEN = - 8 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
N-Channel
VDD = 10 V, RL = 2.1 Ω
ID 4.8 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 10 V, RL = 4.2 Ω
ID - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 4.8 A, VGS = 0 V
IS = - 2.4 A, VGS = 0 V
trr
N-Channel
Qrr IF = 4.8 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta P-Channel
IF = - 2.4 A, dI/dt = - 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.a Max.
3.5 7
36
8 18
11 17
18 27
21 32
8 16
6 12
7 14
10 20
9 18
32 48
30 45
25 38
10 20
6 12
0.8
- 0.8
11
21
3
13
6
17
5
4
2.6
- 2.6
20
- 10
1.2
- 1.2
17
32
5
20
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 5 V thru 2 V
16
VGS = 1.5 V
12
8
4
3
2
TC = 25 °C
4
0
0
0.075
VGS = 1 V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
1
0
0.0
1000
TC = 125 °C
TC = - 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
0.060
0.045
0.030
0.015
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.000
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 6 A
4
VDS = 10 V
3
VDS = 16 V
2
1
800
Ciss
600
400
200
0 Crss
0
1.8
Coss
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
VGS = 2.5 V, ID = 5.6 A
1.5
20
1.2
VGS = 4.5 V, ID = 6 A
0.9
0
0
www.vishay.com
4
246
Qg - Total Gate Charge (nC)
Gate Charge
8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/




SI5515CDC datasheet pdf
Download PDF
SI5515CDC pdf
View PDF for Mobile


Similiar Datasheets : SI5515CDC

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact