SI5513DC Datasheet PDF - Vishay Siliconix


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SI5513DC
Vishay Siliconix

Part Number SI5513DC
Description Complementary 20-V (D-S) MOSFET
Page 7 Pages

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Si5513DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
20
rDS(on) (W)
0.075 @ VGS = 4.5 V
0.134 @ VGS = 2.5 V
0.155 @ VGS = 4.5 V
0.260 @ VGS = 2.5 V
ID (A)
4.2
3.1
2.9
2.2
Qg (Typ)
4
3
1206-8 ChipFETr
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
Marking Code
EB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5513DC-T1
Si5513DC-T1—E3 (Lead (Pb)-Free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 85_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
5 secs
4.2
3.0
1.8
2.1
1.1
Steady State 5 secs
20
"12
3.1 2.9
2.2 2.1
10
0.9 1.8
1.1 2.1
0.6 1.1
55 to 150
260
Steady State
20
2.1
1.5
10
0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
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Si5513DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = 250 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS = 20 V, VGS = 0 V, TJ = 70_C
VDS w 5 V, VGS = 4.5 V
VDS p 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.1 A
VGS = 4.5 V, ID = 2.1 A
VGS = 2.5 V, ID = 2.3 A
VGS = 2.5 V, ID = 1.7 A
VDS = 10 V, ID = 3.1 A
VDS = 10 V, ID = 2.1 A
IS = 0.9 A, VGS = 0 V
IS = 0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 3.1 A
Qgs P-Channel
VDS = 10 V, VGS = 4.5 V, ID = 2.1 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
P-Channel
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 0.9 A, di/dt = 100 A/ms
IF = 0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.6
0.6
10
10
1.5
1.5
"100
"100
1
1
5
5
0.065
0.130
0.115
0.215
8
5
0.8
0.8
0.075
0.155
0.134
0.260
1.2
1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
46
36
0.6
nC
0.9
1.3
0.6
12 18
13 20
35 55
35 55
19 30
25 40 ns
9 15
25 40
40 80
40 80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 71186
S-42138—Rev. F, 15-Nov-04
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Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 5 thru 3 V
8
2.5 V
6
10
8
6
N−CHANNEL
Transfer Characteristics
TC = 55_C
25_C
125_C
4
2
0
0.0
0.30
2V
1.5 V
0.5 1.0 1.5 2.0 2.5
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
0.25
0.20
0.15
0.10
VGS = 2.5 V
0.05
VGS = 4.5 V
0.00
0246
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.1 A
4
8
10
4
2
0
0.0
600
0.5 1.0 1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
Capacitance
3.5
500 Ciss
400
300
200 Coss
100
Crss
0
0
4
8 12 16 20
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.1 A
1.4
3 1.2
2 1.0
1 0.8
0
01234
Qg Total Gate Charge (nC)
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
Document Number: 71186
S-42138—Rev. F, 15-Nov-04
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Si5513DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
TJ = 150_C
TJ = 25_C
0.15
0.10
0.05
ID = 3.1 A
1
0.0
0.4
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
Threshold Voltage
1.2
0.2
0.0
ID = 250 mA
0.2
0.00
0
50
40
30
20
1234
VGS Gate-to-Source Voltage (V)
Single Pulse Power
5
0.4
10
0.6
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
104 103
102 101
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
90_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
1000
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Document Number: 71186
S-42138—Rev. F, 15-Nov-04
Datasheet pdf - http://www.DataSheet4U.net/




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