SI5511DC Datasheet PDF - Vishay Siliconix


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SI5511DC
Vishay Siliconix

Part Number SI5511DC
Description N- and P-Channel 30-V (D-S) MOSFET
Page 12 Pages

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Si5511DC
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
N-Channel 30
0.055 at VGS = 4.5 V
0.090 at VGS = 2.5 V
0.150 at VGS = - 4.5 V
P-Channel - 30
0.256 at VGS = - 2.5 V
1206-8 Chip-FET ®
ID (A)
4a,g
4a,g
- 3.6a
- 2.7a
Qg (Typ)
4.2 nC
2.85 nC
FEATURES
• TrenchFET® Power MOSFETs
APPLICATIONS
• Buck-Boost
- DSC
- Portable Devices
RoHS
COMPLIANT
1
S1
D1
D1
G1
S2
D2 G2
D2
Marking Code
EE XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5511DC-T1-E3 (Lead (Pb)-free)
D1
G1
S2
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 - 30
± 12
4a, g
4a, g
4a, g
3.9a
15
- 3.6a
- 2.8a
- 2.3b, c
- 1.8b, c
- 10
2.6 - 2.6
1.7b, c
3.1
- 1.7b, c
2.6
2.0 1.7
2.1b, c
1.3b, c
1.33b, c
0.84b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ Max Typ Max
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
50 60 77 95
30 40 33 40
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 s
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade
bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W for N-Channel and 130 °C/W for P-Channel.
g. Package limited.
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
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Si5511DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
rDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 4.5 V
VDS - 5 V, VGS = - 4.5 V
VGS = 4.5 V, ID = 4.8 A
VGS = - 4.5 V, ID = - 2.3 A
VGS = 2.5 V, ID = 3.8 A
VGS = - 2.5 V, ID = 1.8 A
VDS = 15 V, ID = 4.8 A
VDS = - 15 V, ID = - 2.3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 5 V, ID = 4.8 A
Qg VDS = - 15 V, VGS = - 5 V, ID = - 3.2 A
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 4.8 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 4.5 V, ID = - 3.2 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
30
- 30
0.7
- 0.7
15
- 10
Typa Max Unit
V
24.2
- 23.1
3.6
2.3
2
-2
100
- 100
1
-1
10
- 10
mV/°C
V
nA
µA
A
0.045
0.125
0.075
0.213
10.8
6.56
0.055
0.150
0.090
0.256
Ω
S
435
260
65
55
30
42
4.7 7.1
4.1 6.2
4.2 6.3
3.8 4.6
1.1
0.6
0.9
1.85
2.7
7.7
pF
nC
Ω
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Document Number: 73787
S-72204-Rev. B, 22-Oct-07
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Si5511DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typa Max Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
VDD = 15 V, RL = 3.95 Ω
ID 3.8 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 15 V, RL = 18.1 Ω
ID - 1.86 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
9 12
15 23
45 68
78 117
ns
48 72
33 50
28 42
65 98
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
2.6
- 2.6
15
- 10
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
IS = 2.4 A, VGS = 0 V
IS = - 1.5 A, VGS = 0 V
N-Ch
P-Ch
trr
N-Ch
P-Ch
N-Channel
N-Ch
Qrr IF = 2.4 A, di/dt = 100 A/µs, TJ = 25 °C P-Ch
0.8
- 0.8
11.6
19.8
6.1
17.5
1.2
- 1.2
18
30
9.2
27
V
ns
nC
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
N-Ch
IF = - 1.5 A, di/dt = - 100 A/µs, TJ = 25 °C P-Ch
tb
N-Ch
P-Ch
8.4
17.2
3.2
2.6
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
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Si5511DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15 5
12 VGS = 5 V thru 3 V
VGS = 2.5 V
9
4
3
6
3
0
0.0
0.20
VGS = 2 V
VGS = 1.5 V
0.6 1.2 1.8 2.4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.16
0.12
0.08
0.04
VGS = 2.5 V
VGS = 4.5 V
0.00
0 3 6 9 12 15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
ID = 4.8 A
4
VDS = 15 V
3
2
VGS = 24 V
2
1
0
0.0
600
TC = 125 °C
TC = 25 °C
TC = - 55 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
500
Ciss
400
300
200
100 Coss
0 Crss
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 4.5 V
ID = 4.8 A
1.4
30
1.2 VGS = 2.5 V
ID = 3.7 A
1.0
1 0.8
0
0
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12345
Qg - Total Gate Charge (nC)
Gate Charge
6
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73787
S-72204-Rev. B, 22-Oct-07
Datasheet pdf - http://www.DataSheet4U.net/




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