SI5504DC Datasheet PDF - Vishay Siliconix


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SI5504DC
Vishay Siliconix

Part Number SI5504DC
Description Complementary 30-V (D-S) MOSFET
Page 7 Pages

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Si5504DC
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-30
1206-8 ChipFET
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
rDS(on) (W)
0.085 @ VGS = 10 V
0.143 @ VGS = 4.5 V
0.165 @ VGS = -10 V
0.290 @ VGS = -4.5 V
ID (A)
"3.9
"3.0
"2.8
"2.1
D1
G1
Marking Code
EA XX
Lot Traceability
and Date Code
Part # Code
S1
N-Channel MOSFET
Ordering Information: Si5504DC-T1
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
"3.9
"2.8
1.8
2.1
1.1
30
"20
"2.9
"2.8
"2.1
"2.0
"10
0.9 -1.8
1.1 2.1
0.6 1.1
-55 to 150
260
-30
"2.1
"1.5
-0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET/PowerPAK is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the
singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71056
S-21251—Rev. B, 05-Aug-02
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Si5504DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
VDS = VGS, ID = -250 mA
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = 0 V, VGS = "20 V
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 85_C
VDS = -24 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VDS p -5 V, VGS = -10 V
VGS = 10 V, ID = 2.9 A
VGS = -10 V, ID = -2.1 A
VGS = 4.5 V, ID = 2.2 A
VGS = -4.5 V, ID = -1.6 A
VDS = 15 V, ID = 2.9 A
VDS = -15 V, ID = -2.1 A
IS = 0.9 A, VGS = 0 V
IS = -0.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 2.9 A
Qgs
P-Channel
VDS = -15 V, VGS = -10 V, ID = -2.1 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%,
b. Guaranteed by design, not subject to production testing.
N-Channel
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
P-Channel
VDD = -15 V, RL = 15 W
ID ^ -1 A, VGEN = -10 V, RG = 6 W
IF = 0.9 A, di/dt = 100 A/ms
IF = -0.9 A, di/dt = 100 A/ms
Min Typ Max Unit
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
10
-10
"100
"100
1
-1
5
-5
0.072
0.137
0.120
0.240
6
3
0.8
-0.8
0.085
0.165
0.143
0.290
1.2
-1.2
V
nA
mA
A
W
S
V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5 7.5
5.5 6.6
0.8
nC
1.2
1.0
0.9
7 11
8 12
12 18
11 18
12 18
ns
14 21
7 11
8 12
40 80
40 80
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Document Number: 71056
S-21251Rev. B, 05-Aug-02
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Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
VGS = 10 thru 5 V
8
10
8
N−CHANNEL
Transfer Characteristics
6 4V
6
4
2 3V
0
0.0
0.20
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
3.0
0.15
0.10
VGS = 4.5 V
0.05
VGS = 10 V
4
2
0
0
400
300
TC = -125_C
25_C
-55 _C
1234
VGS - Gate-to-Source Voltage (V)
Capacitance
Ciss
5
200
100 Coss
0.00
0
10
2468
ID - Drain Current (A)
Gate Charge
8
VDS = 15 V
ID = 2.9 A
6
4
2
0
01234
Qg - Total Gate Charge (nC)
10
5
Crss
0
06
12 18 24
VDS - Drain-to-Source Voltage (V)
30
On-Resistance vs. Junction Temperature
1.8
1.6 VGS = 10 V
ID = 2.9 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
Document Number: 71056
S-21251Rev. B, 05-Aug-02
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Si5504DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
TJ = 150_C
0.15
0.10
ID = 2.9 A
1
0.00
TJ = 25_C
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
0.05
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
Threshold Voltage
0.4
0.2 ID = 250 mA
-0.0
-0.2
-0.4
-0.6
Single Pulse Power
50
40
30
20
10
-0.8
-50 -25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10- 4 10- 3
10- 2 10- 1
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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2-4
Document Number: 71056
S-21251Rev. B, 05-Aug-02
Datasheet pdf - http://www.DataSheet4U.net/




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