SI5504BDC Datasheet PDF - Vishay Siliconix


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SI5504BDC
Vishay Siliconix

Part Number SI5504BDC
Description N- and P-Channel 30 V (D-S) MOSFET
Page 12 Pages

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Si5504BDC
Vishay Siliconix
N- and P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.065 at VGS = 10 V
N-Channel 30
0.100 at VGS = 4.5 V
P-Channel
0.140 at VGS = - 10 V
- 30
0.235 at VGS = - 4.5 V
ID (A)
4a
4a
- 3.7
- 2.8
Qg (Typ)
2 nC
2.2 nC
1206-8 ChipFET Dual
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC for Portable Applications
• Load Switch
1
S1
D1
D1
G1
S2
D2 G2
D2
Marking Code
EF XXX
Lot Traceability
and Date Code
Part #
Code
Bottom View
Ordering Information: Si5504BDC-T1-E3 (Lead (Pb)-free)
Si5504BDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1 D2
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30 - 30
± 20
4a - 3.7
3.8
3.7b, c
2.6b, c
10
- 2.7
- 2.5b, c
- 1.8b, c
- 10
2.5
1.3b, c
3.12
- 2.5
- 1.3b, c
3.1
22
1.5b, c
1.5b, c
0.8b, c
0.8b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
70 85 70 85
33 40 33 40
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequade bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 120 °C/W.
Document Number: 74483
S10-0547-Rev. B, 08-Mar-10
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Si5504BDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 µA
ID = - 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
ID = - 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
VDS 5 V, VGS = 10 V
VDS - 5 V, VGS = - 10 V
VGS = 10 V, ID = 3.1 A
VGS = - 10 V, ID = - 2.1 A
VGS = 4.5 V, ID = 1 A
VGS = - 4.5 V, ID = - 0.43 A
VDS = 15 V, ID = 3.1 A
VDS = - 15 V, ID = - 2.1 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 3.6 A
Qg VDS = - 15 V, VGS = - 10 V, ID = - 2.5 A
N-Channel
VDS = 15 V, VGS = 4.5 V, ID = 3.6 A
Qgs
P-Channel
Qgd VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
30
- 30
1.5
- 1.5
10
- 10
Typ. Max. Unit
V
27 mV/°C
- 30
-5
3.5
3
V
-3
100
- 100
nA
1
-1
µA
5
-5
A
0.053
0.112
0.081
0.188
5
3.5
0.065
0.140
0.100
0.235
Ω
S
220
170
50
50
25
31
4.5 7
4.5 7
23
2.2 3.5
0.7
0.7
0.7
1
3
13
pF
nC
Ω
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Document Number: 74483
S10-0547-Rev. B, 08-Mar-10
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Si5504BDC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 15 V, RL = 5.8 Ω
ID 2.6 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
P-Channel
VDD = - 15 V, RL = 7.5 Ω
ID - 2 A, VGEN = - 4.5 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
N-Channel
VDD = 15 V, RL = 5.8 Ω
ID 2.6 A, VGEN = 10 V, Rg = 1 Ω
P-Channel
VDD = - 15 V, RL = 7.5 Ω
ID - 2 A, VGEN = - 10 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ISM
VSD
IS = 2.6 A, VGS = 0 V
IS = - 2 A, VGS = 0 V
trr
N-Channel
Qrr IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta P-Channel
IF = - 2 A, dI/dt = - 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
15
30
80
60
12
10
25
10
4
4
12
10
10
10
5
5
0.8
- 0.8
30
20
20
10
23
13
7
7
Max.
25
45
120
90
20
15
40
15
8
8
20
15
15
15
10
10
2.5
- 2.5
10
- 10
1.2
- 1.2
50
40
40
20
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74483
S10-0547-Rev. B, 08-Mar-10
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Si5504BDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5
16 VGS = 10 V thru 6 V
5V
12
8
4
0
0.0
0.20
4V
3V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.16
0.12
0.08
0.04
VGS = 4.5 V
VGS = 10 V
0.00
0
10
8
5 10 15
ID - Drain Current (A)
On-Resistance vs. Drain Current
VDS = 15 V, ID = 3.6 A
20
6
4 VDS = 24 V, ID = 3.6 A
2
0
012345
Qg - Total Gate Charge (nC)
Gate Charge
4
3
TC = 25 °C
2
TC = 125 °C
1
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
300
250
Ciss
200
150
100
Coss
50
Crss
0
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.8
VGS = 10 V, 4.5 V
ID = 3.1 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 74483
S10-0547-Rev. B, 08-Mar-10
Datasheet pdf - http://www.DataSheet4U.net/




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