SI5476DU Datasheet PDF - Vishay Siliconix


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SI5476DU
Vishay Siliconix

Part Number SI5476DU
Description N-Channel 60-V (D-S) MOSFET
Page 9 Pages

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New Product
N-Channel 60-V (D-S) MOSFET
Si5476DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
60
RDS(on) (Ω)
0.034 at VGS = 10 V
0.041 at VGS = 4.5 V
PowerPAK ChipFET Single
ID (A)a
12
12
Qg (Typ.)
10.5 nC
1
2 Marking Code
D3
DD
4
8D
7D
6S
D
G
S
AA XXX
Lot Traceability
and Date Code
Part # Code
5
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
APPLICATIONS
• Load Switch for Portable Applications
• DC-DC Switch for Low Power Synchronous
Rectification
• Intermediate Switch Driver
for DC/DC Applications
G
RoHS
COMPLIANT
D
Bottom View
S
Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
ID
IDM
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
60
± 20
12a
12a
7b, c
5.6b, c
25
12a
2.6b, c
15
11.2
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
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Si5476DU
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 1 mA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 4.6 A
VGS = 4.5 V, ID = 4.2 A
VDS = 15 V, ID = 4.6 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 30 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 30 V, VGS = 10 V, ID = 4.6 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 30 V, VGS = 4.5 V, ID = 4.6 A
f = 1 MHz
VDD = 30 V, RL = 5.4 Ω
ID 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 30 V, RL = 5.4 Ω
ID 5.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 5.5 A, VGS = 0 V
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
60
1
25
Typ. Max. Unit
55
- 6.3
0.028
0.033
20
V
mV/°C
3
± 100
1
10
0.034
0.041
V
nA
µA
A
Ω
S
1100
90
55
21
10.5
3.5
4.2
3.3
20
150
20
60
10
15
22
10
0.85
25
25
19
6
32
16
30
225
30
90
15
25
40
15
12
25
1.2
50
50
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73663
S-81448-Rev. B, 23-Jun-08



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25 5
VGS = 10 thru 4 V
20
4
Si5476DU
Vishay Siliconix
TC = - 55 °C
15 3
10 2 TC = 125 °C
5 VGS = 3 V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.040
1 TC = 25 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
0.036
0.032
0.028
VGS = 4.5 V
VGS = 10 V
0.024
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 4.6 A
8
6
VDS = 30 V
VDS = 48 V
4
2
0
0 5 10 15 20
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73663
S-81448-Rev. B, 23-Jun-08
25
1200
900
Ciss
600
300
Coss
0 Crss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
2.0
1.8 VGS = 10 V
ID = 4.6 A
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5476DU
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 0.08
TJ = 150 C
10
0.07
0.06
0.05
ID = 4.6 A
TA = 125 C
TJ = 25 C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.6
2.4
2.2 ID = 250 µA
2.0
1.8
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.04
0.03
TA = 25 C
0.02
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
BVDSS Limited
100 µs
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1 ms
1
10 ms
0.1 TA = 25 C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73663
S-81448-Rev. B, 23-Jun-08




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