SI5473DC Datasheet PDF - Vishay Siliconix


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SI5473DC
Vishay Siliconix

Part Number SI5473DC
Description P-Channel 12-V (D-S) MOSFET
Page 5 Pages

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Si5473DC
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.027 @ VGS = - 4.5 V
- 12 0.0335 @ VGS = - 2.5 V
0.045 @ VGS = - 1.8 V
1206-8 ChipFETr
1
D
D
D
D
D
DG
S
Bottom View
Ordering Information: Si5473DC-T1
ID (A)
- 8.1
- 7.3
- 6.3
FEATURES
D TrenchFETr Power MOSFETS
D Low rDS(on) and Excellent Power Handling In
Compact Footprint
APPLICATIONS
D Battery and Load Switch for Portable Devices
S
Marking Code
BI XXX
Lot Traceability
and Date Code
Part #
Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 12
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 8.1 - 5.9
- 5.9 - 4.3
"20
- 2.1 - 1.1
2.5 1.3
1.3 0.7
- 55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 85_C
VDS p - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.9 A
VGS = - 2.5 V, ID = - 5.3 A
VGS = - 1.8 V, ID = - 2.2 A
VDS = - 5 V, ID = - 5.9 A
IS = - 1.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.9 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1.1 A, di/dt = 100 A/ms
Min Typ Max Unit
- 0.40
- 20
- 1.0
"100
-1
-5
0.022
0.028
0.036
20
- 0.8
0.027
0.0335
0.045
- 1.2
V
nA
mA
A
W
S
V
21 32
3.1 nC
6.0
25 40
50 75
145 220 ns
90 135
70 105
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
15
10
1.5 V
5
0
0
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2
1V
1234
VDS - Drain-to-Source Voltage (V)
5
20
16
12
8
4
0
0.0
Transfer Characteristics
TC = - 55_C
25_C
- 55_C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
2.5
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
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Si5473DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3000
Capacitance
0.08
0.06
0.04
VGS = 1.8 V
VGS = 2.5 V
0.02
VGS = 4.5 V
0.00
0
5 10 15
ID - Drain Current (A)
5
VDS = 6 V
ID = 5.9 A
4
Gate Charge
20
3
2
1
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
2500
Ciss
2000
1500
1000
Coss
500 Crss
0
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
VGS = 4.5 V
ID = 5.9 A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 5.9 A
TJ = 25_C
0.04
0.02
ID = 2.2 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
0.00
0
1234
VGS - Gate-to-Source Voltage (V)
5
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Si5473DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
50
Single Pulse Power
0.3
ID = 250 mA
0.2
0.1
0.0
- 0.1
40
30
20
10
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (_C)
0
10- 3
10- 2
10- 1
1
Time (sec)
10
Safe Operating Area
100
rDS(on) Limited
IDM
Limited
10
P(t) = 0.001
100 600
2
1
Duty Cycle = 0.5
1 ID(on)
Limited
0.1
TA = 25_C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
0.1
BVDSS Limited
1 10
VDS - Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
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4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
80_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
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