SI5471DC Datasheet PDF - Vishay Siliconix


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SI5471DC
Vishay Siliconix

Part Number SI5471DC
Description P-Channel 20-V (D-S) MOSFET
Page 11 Pages

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Si5471DC
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.020 at VGS = - 4.5 V
- 20 0.028 at VGS = - 2.5 V
0.062 at VGS = - 1.8 V
ID (A)a, g
-6
-6
-6
Qg (Typ.)
30 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
- Notebook
- Netbook
1206-8 ChipFET®
1
D
D
D
D
D
D
S
G
S
G
Bottom View
Ordering Information: Si5471DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
D
P-Channel MOSFET
Limit
- 20
± 12
- 6a
- 6a
- 6a, b, c
- 6a, b, c
- 25
- 5.2
- 2.1b, c
6.3
4
2.5b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
40
15
50
°C/W
20
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
g. TC = 25 °C.
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 9.1 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 7.7 A
VGS = - 1.8 V, ID = - 1.6 A
Forward Transconductancea
Dynamicb
gfs VDS = - 10 V, ID = - 9.1 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 10 V, VGS = - 10 V, ID = - 9.1 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = - 10 V, VGS = - 4.5 V, ID = - 9.1 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-on Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 1.4 Ω
ID - 7.3 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-on Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = - 10 V, RL = 1.4 Ω
ID - 7.3 A, VGEN = - 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 7.3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = - 7.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
- 20
- 0.6
25
1
Typ. Max.
- 14
3.4
- 1.1
± 100
1
10
0.0167
0.023
0.0365
30
0.020
0.028
0.062
2945
385
370
64
30
6
7
5
32
35
70
33
9
8
78
22
96
45
10
48
53
105
50
18
16
117
33
- 0.8
25
14
11
14
5.2
25
- 1.2
38
21
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25 10
VGS = 5 V thru 2.5 V
20
8
VGS = 2 V
15 6
10 4
5
0
0.0
0.08
VGS = 1.5 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
2
0
0.0
5000
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5 1.0 1.5 2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
VGS = 1.8 V
0.06
0.04
0.02
0.00
0
VGS = 2.5 V
VGS = 4.5 V
5 10 15 20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 9.1 A
8
VDS = 10 V
6
VDS = 5 V
VDS = 16 V
4
25
2
4000
3000
Ciss
2000
1000
Coss
Crss
0
0
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 9.1 A
1.3
VGS = 4.5 V
20
VGS = 2.5 V
1.1
0.9
0
0 15 30 45 60 75
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
10 TJ = 150 °C
TJ = 25 °C
1
0.04
0.03
0.02
0.01
ID = 9.1 A
TJ = 125 °C
TJ = 25 °C
0
0 0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.1
0.9
ID = 250 µA
0.7
0.5
0.00
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0.3
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001 0.01
0.1 1 10
Time (s)
Single Pulse Power
10
1 ms
1
10 ms
TA = 25 °C
Single Pulse
0.1
100 ms
1 s, 10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
100 600
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Document Number: 64988
S09-1000-Rev. A, 01-Jun-09
Datasheet pdf - http://www.DataSheet4U.net/




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