SI5458DU Datasheet PDF - Vishay Siliconix


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SI5458DU
Vishay Siliconix

Part Number SI5458DU
Description N-Channel 30-V (D-S) MOSFET
Page 10 Pages

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Si5458DU
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.041 at VGS = 10 V
30
0.051 at VGS = 4.5 V
ID (A)d, e
6
6
Qg (Typ.)
2.8 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
PowerPAK® ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
APPLICATIONS
• Load Switch
• HDD DC/DC
Marking Code
AP XXX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5458DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(1, 2, 3, 6, 7, 8)
G
(4)
(5)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)f, g
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
6e
6e
6a, b, e
6a, b, e
20
6
2.9a, b
10.4
6.7
3.5a, b
2.2a, b
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
30
10
36 °C/W
12
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 72 °C/W.
d. Based on TC = 25 °C.
e. Package limited.
f. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
g. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 65019
S09-1392-Rev. A, 20-Jul-09
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 7.1 A
VGS = 4.5 V, ID = 6.3 A
VDS = 15 V, ID = 7.1 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 7.1 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 7.1 A
f = 1 MHz
VDD = 15 V, RL = 2.7 Ω
ID 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 2.7 Ω
ID 5.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 5.6 A, VGS = 0 V
IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
30
1.2
15
0.6
Typ. Max. Unit
32
-5
0.034
0.042
15
V
mV/°C
3
± 100
1
10
0.041
0.051
V
nA
µA
A
Ω
S
325
60
30
69
2.8 4.2
1.1
0.8
2.8 5.6
12 18
13 20
16 25
11 17
48
9 18
11 20
8 15
pF
nC
Ω
ns
1.2
A
20
0.8 1.2
V
11 20 ns
4 8 nC
6
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65019
S09-1392-Rev. A, 20-Jul-09
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Si5458DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 10 V thru 4 V
15
5
4
10
5 VGS = 3 V
0
0.0
0.06
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.05
0.04
0.03
VGS = 4.5 V
VGS = 10 V
3
2
1
0
0
400
300
200
100
TC = 25 °C
TC = 125 °C
TC = - 55 °C
123
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4
Ciss
Coss
0.02
0
10
8
5 10 15
ID - Drain Current (A)
On-Resistance vs. Drain Current
ID = 7.1 A
20
Crss
0
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
VGS = 10 V; ID = 7.1 A
1.5
30
6
VDS = 15 V
VDS = 24 V
4
2
1.3
1.1 VGS = 4.5 V; ID = 6.3 A
0.9
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65019
S09-1392-Rev. A, 20-Jul-09
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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
1
TJ = 25 °C
0.08
0.06
0.04
0.02
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.3
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
2.1 25
1.9
ID = 250 µA
1.7
20
15
1.5 10
1.3 5
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001
0.01 0.01
1
10
Time (s)
Single Pulse Power
100 µs
1 1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
100 ms
1 s, 10 s
DC
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
100
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Document Number: 65019
S09-1392-Rev. A, 20-Jul-09
Datasheet pdf - http://www.DataSheet4U.net/




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