SI5456DU Datasheet PDF - Vishay Siliconix


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SI5456DU
Vishay Siliconix

Part Number SI5456DU
Description N-Channel 20-V (D-S) MOSFET
Page 10 Pages

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N-Channel 20-V (D-S) MOSFET
Si5456DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.010 at VGS = 10 V
0.0135 at VGS = 4.5 V
PowerPAK ChipFET Single
1
2
D3
DD
4
8D
7D
6S
D
G
S
5
Bottom View
FEATURES
ID (A)a
12
12
Qg (Typ.)
9.8 nC
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
D
APPLICATIONS
Marking Code
• Load Switch
• DC/DC
AC XXX
Lot Traceability
and Date Code
G
Part # Code
S
Ordering Information: Si5456DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
IS
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
20
± 20
12a
12a
12a, b, c
10.8b, c
50
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
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Si5456DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 9.3 A
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 9.3 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 14 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 14 A
f = 1 MHz
VDD = 10 V, RL = 1.1 Ω
ID 9.6 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 10 V, RL = 1.1 Ω
ID 9.6 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 9.6 A, VGS = 0 V
IF = 9.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
20
1
20
0.2
Typ. Max. Unit
21
- 4.8
0.008
0.011
25
2.5
± 100
1
10
0.010
0.0135
V
mV/°C
V
ns
µA
A
Ω
S
1200
350
220
20
9.8
3.2
3.2
1.1
20
15
20
10
10
10
20
10
0.85
15
10
8
7
30
15
2.2
30
25
30
15
15
15
30
15
12
30
1.2
30
20
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 20
VGS = 10 V thru 4 V
40
16
Si5456DU
Vishay Siliconix
30
20 VGS = 3 V
10
0
0.0
0.020
VGS = 2 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
12
8
4
0
0.0
1500
TC = - 55 °C
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.016
0.012
0.008
VGS = 4.5 V
VGS = 10 V
0.004
0.000
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 14 A
8
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
1200
900
Ciss
600
300
0
0
Coss
Crss
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
ID = 9.3 A
1.4
VGS = 10 V
20
1.2
VGS = 4.5 V
1.0
2 0.8
0
0 4 8 12 16
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
20
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5456DU
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
TJ = 150 °C
TJ = 25 °C
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.0
0.04
0.03
0.02
ID = 9.3 A; TJ = 125 °C
ID = 9.3 A; TJ = 25 °C
ID = 2 A; TJ = 125 °C
0.01
ID = 2 A; TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1.8
1.6
ID = 250 µA
1.4
1.2
1.0
40
30
20
10
0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
100 Limited by RDS(on)*
100 µs
10
1 ms
1
TA = 25 °C
Single Pulse
0.1
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 64800
S09-0665-Rev. A, 20-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




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