SI5449DC Datasheet PDF - Vishay Siliconix


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SI5449DC
Vishay Siliconix

Part Number SI5449DC
Description P-Channel 30-V (D-S) MOSFET
Page 4 Pages

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Si5449DC
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
0.085 @ VGS = --4.5 V
--30
0.135 @ VGS = --2.5 V
ID (A)
--4.3
--3.4
1206-8 ChipFETt
1
D
D
D
D
D
DG
S
Bottom View
Ordering Information: Si5449DC-T1
S
Marking Code
BH XX
Lot Traceability
and Date Code
Part #
Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IAS
PD
TJ, Tstg
--30
12
--4.3 --3.1
--3.1 --2.2
--15
--2.1 --1.1
2.5 1.3
1.3 0.7
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71327
S-21251—Rev. B, 05-Aug-02
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Si5449DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = --250 mA
VDS = 0 V, VGS = 12 V
VDS = --24 V, VGS = 0 V
VDS = --24 V, VGS = 0 V, TJ = 85_C
VDS --5 V, VGS = --4.5 V
VGS = --4.5 V, ID = --3.1 A
VGS = --2.5 V, ID = --1 A
VDS = --10 V, ID = --3.1 A
IS = --1.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width 300 ms, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
VDS = --15 V, VGS = --4.5 V, ID = --3.1 A
VDD = --15 V, RL = 15
ID --1 A, VGEN = --4.5 V, RG = 6
IF = --1.1 A, di/dt = 100 A/ms
Min Typ Max Unit
--0.6 V
100
nA
--1
--5 mA
--15 A
0.071
0.112
0.085
0.135
8.5 S
--0.8 --1.2
V
7.2 11
2.2 nC
1.7
13 25
14 30
35 70 ms
20 40
40 60 ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
15
VGS = 5 thru 3.5 V
12
Output Characteristics
3V
9
2.5 V
6
3 2V
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS -- Drain-to-Source Voltage (V)
Transfer Characteristics
15
TC = --55_C
12 25_C
9 125_C
6
3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS -- Gate-to-Source Voltage (V)
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Document Number: 71327
S-21251—Rev. B, 05-Aug-02
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Si5449DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1200
Capacitance
0.16
0.12
VGS = 2.5 V
0.08
VGS = 4.5 V
0.04
0.00
0 3 6 9 12
ID -- Drain Current (A)
Gate Charge
5
VDS = 15 V
ID = 3.1 A
4
15
Ciss
900
600
300 Coss
Crss
0
0 6 12 18 24 30
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.1 A
1.4
3 1.2
2 1.0
1 0.8
0
02468
Qg -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
ID = 3.1 A
TJ = 25_C
0.10
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD -- Source-to-Drain Voltage (V)
Document Number: 71327
S-21251—Rev. B, 05-Aug-02
0.00
0
1234
VGS -- Gate-to-Source Voltage (V)
5
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Si5449DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
0.4 ID = 250 mA
0.2
0.0
40
30
20
10
Single Pulse Power
--0.2
--50 --25
0 25 50 75 100 125 150
TJ -- Temperature (_C)
0
10--3
10--2
10--1
1
Time (sec)
10
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10--4
Single Pulse
10--3
10--2
10--1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
80_C/W
3. TJM -- TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10--4
Single Pulse
10--3
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10--2
10--1
Square Wave Pulse Duration (sec)
1 10
Document Number: 71327
S-21251—Rev. B, 05-Aug-02
Datasheet pdf - http://www.DataSheet4U.net/




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