SI5445BDC Datasheet PDF - Vishay Siliconix


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SI5445BDC
Vishay Siliconix

Part Number SI5445BDC
Description P-Channel 1.8-V (G-S) MOSFET
Page 6 Pages

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Si5445BDC
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.033 @ VGS = 4.5 V
8 0.043 @ VGS = 2.5 V
0.060 @ VGS = 1.8 V
ID (A)
7.1
6.2
5.3
Qg (Typ)
14
FEATURES
D TrenchFETr Power MOSFET
1206-8 ChipFETr
1
D
D
D
D
D
DG
S
Bottom View
Marking Code
BM XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
Ordering Information: Si5445BDC-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
8
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
7.1
5.2
2.1
2.5
1.3
"20
55 to 150
260
5.2
3.7
1.1
1.3
0.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
45
85
17
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73251
S-50133—Rev. A, 24-Jan-05
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SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 8 V, VGS = 0 V
VDS = 8 V, VGS = 0 V, TJ = 85_C
VDS p5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 5.2 A
VGS = 2.5 V, ID = 4.5 A
VGS = 1.8 V, ID = 1.7 A
VDS = 5 V, ID = 5.2 A
IS = 1.1 A, VGS = 0 V
0.45
20
0.027
0.035
0.050
18
0.8
1.0
"100
1
5
0.033
0.043
0.060
1.2
V
nA
mA
A
W
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Reverse Recovery Charge
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Qrr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 4 V, VGS = 4.5 V, ID = 5.2 A
f = 1 MHz
ID
^
1VADD, V=GE4N
V,
=
R4L.5=V4,
W
Rg
=
6
W
IF = 1.1 A, di/dt = 100 A/ms
14 21
1.8 nC
3.3
8W
12 20
22 35
75 115 ns
50 75
75 115
40 60 nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2.5 V
2V
16
20
16
12 12
8
1.5 V
4
1V
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS Drain-to-Source Voltage (V)
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3.0
8
4
0
0.0
Transfer Characteristics
TC = 55_C
25_C
125_C
0.5 1.0 1.5 2.0
VGS Gate-to-Source Voltage (V)
2.5
Document Number: 73251
S-50133—Rev. A, 24-Jan-05
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TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.16
2000
Capacitance
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
VGS = 1.8 V
48
VGS = 2.5 V
VGS = 4.5 V
12 16 20
1600
1200
Ciss
800
400
Crss
Coss
0
012345678
ID Drain Current (A)
VDS Drain-to-Source Voltage (V)
Gate Charge
5
VDS = 10 V
ID = 5.2 A
4
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 5.2 A
1.4
3 1.2
2 1.0
1 0.8
0
0 3 6 9 12 15 18
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 73251
S-50133—Rev. A, 24-Jan-05
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.16
0.14
0.12
0.10
0.08
0.06
ID = 2 A
ID = 5.2 A
0.04
0.02
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
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Si5445BDC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
Single Pulse Power
50
0.3
0.2
0.1
0.0
0.1
ID = 250 mA
40
30
20
10
0.2
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
103
102
Safe Operating Area
100
*rDS(on) Limited
IDM Limited
101
1
Time (sec)
10
1 ID(on)
Limited
0.1
TC = 25_C
Single Pulse
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
10
100 600
2
1
Duty Cycle = 0.5
0.01
BVDSS Limited
0.1 1
*VGS
uVmDSinimuDmraVinG-Stoa-St owuhricceh
Voltage (V)
rDS(on) is specified
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 0.05
0.02
0.01
104
Single Pulse
103
102
101
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
80_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
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Document Number: 73251
S-50133—Rev. A, 24-Jan-05
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