SI5441DC Datasheet PDF - Vishay Siliconix


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SI5441DC
Vishay Siliconix

Part Number SI5441DC
Description P-Channel 2.5-V (G-S) MOSFET
Page 4 Pages

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Si5441DC
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.055 @ VGS = 4.5 V
20 0.06 @ VGS = 3.6 V
0.083 @ VGS = 2.5 V
ID (A)
5.3
5.1
4.3
Qg (Typ)
11
FEATURES
D TrenchFETr Power MOSFET
D 2.5-V Rated
Pb-free
Available
1206-8 ChipFETr
1
D
D
D
D
D
D
S
G
Bottom View
Marking Code
BA XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5441DC
Si5441DC-T1—E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS "12
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Currenta
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
5.3
3.8
2.1
2.5
1.3
20
55 to 150
260
3.9
2.8
1.1
1.3
0.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
40
80
15
50
95 _C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
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Si5441DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "12 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 85_C
VDS p5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 3.9 A
VGS = 3.6 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.1 A
VDS = 10 V, ID = 3.9 A
IS = 1.1 A, VGS = 0 V
0.6
20
0.046
0.050
0.070
12
0.8
1.0
"100
1
5
0.055
0.06
0.083
1.2
V
nA
mA
A
W
S
V
VDS = 10 V, VGS = 4.5 V, ID = 3.9 A
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, Rg = 6 W
IF = 1.1 A, di/dt = 100 A/ms
11 22
3.0 nC
2.5
20 30
35 55
65 100 ns
45 70
30 60
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 3 V
16
2.5 V
12
8
2V
4
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS Drain-to-Source Voltage (V)
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2
3.0
Transfer Characteristics
20
TC = 55_C
16
25_C
12
125_C
8
4
0
0.0
0.5 1.0 1.5 2.0 2.5
VGS Gate-to-Source Voltage (V)
3.0
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
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Si5441DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1800
Capacitance
0.15
0.10
VGS = 2.5 V
0.05
VGS = 3.6 V
VGS = 4.5 V
0.00
0 4 8 12 16
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 3.9 A
4
20
1500
Ciss
1200
900
600
Coss
300
Crss
0
04
8
12 16 20
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 3.9 A
1.4
3 1.2
2 1.0
1 0.8
0
0 3 6 9 12
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
0.10
ID = 3.9 A
TJ = 25_C
0.05
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 71055
S-50366—Rev. C, 28-Feb-05
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
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Si5441DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
50
0.4 ID = 250 mA
0.2
0.0
40
30
20
10
Single Pulse Power
0.2
50 25
0 25 50 75 100 125 150
TJ Temperature (_C)
0
103
102
101
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
100 600
0.2
0.1
0.1
0.05
0.02
0.01
104
2
103
Notes:
PDM
Single Pulse
102
101
1
Square Wave Pulse Duration (sec)
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
80_C/W
3. TJM TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71055.
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Document Number: 71055
S-50366—Rev. C, 28-Feb-05
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