SI5440DC Datasheet PDF - Vishay Siliconix


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SI5440DC
Vishay Siliconix

Part Number SI5440DC
Description N-Channel 30-V (D-S) MOSFET
Page 11 Pages

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Si5440DC
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.019 at VGS = 10 V
30
0.024 at VGS = 4.5 V
ID (A)a
6
6
Qg (Typ.)
9 nC
1206-8 ChipFET®
1
D
DD
DD
DG
S
FEATURES
Halogen-free According to IEC 61249-2-21
TrenchFET® Power MOSFET
APPLICATIONS
• Load Switches
- Notebook PC
D
G
Bottom View
Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
6a
6a
6a, b, c
6a, b, c
30
5.2
2.1b, c
6.3
4
2.5b, c
1.6b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, c, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
40
15
50
°C/W
20
Notes:
a. Package limited, TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 69056
S-83037-Rev. A, 22-Dec-08
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS /TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 9.1 A
VGS = 4.5 V, ID = 8.1 A
Forward Transconductancea
Dynamicb
gfs VDS = 15 V, ID = 9.1 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 9.1 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 10 V, VGS = 4.5 V, ID = 9.1 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 2.1 Ω
ID 7.3 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 2.1 Ω
ID 7.3 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 7.3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 7.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
30
1.2
20
Typ. Max. Unit
31
- 5.1
0.016
0.019
30
V
mV/°C
2.5
± 100
1
5
0.019
0.024
V
nA
µA
A
Ω
S
1200
180
80
19
9
3.5
2.3
3
20
12
20
10
10
10
20
10
29
14
30
20
30
15
15
15
30
15
pF
nC
Ω
ns
5.2
A
30
0.8 1.2
V
20 40 ns
10 20 nC
11
ns
9
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69056
S-83037-Rev. A, 22-Dec-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 thru 4 V
25
10
TC = - 55 °C
8
20
15
VGS = 3 V
10
5
VGS = 2 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
TC = 25 °C
2
TC = 125 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.024
1500
0.022
1200
Ciss
0.020
0.018
0.016
0.014
0.012
0
VGS = 4.5 V
VGS = 10 V
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
900
600
300 Coss
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
10
ID = 9.1 A
8
1.6
ID = 9.1 A
1.4
VDS = 15 V
6
VDS = 24 V
1.2 VGS = 10 V, 4.5 V
4 1.0
2 0.8
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69056
S-83037-Rev. A, 22-Dec-08
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Si5440DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.05
0.04
ID = 9.1 A
TJ = 150 °C
TJ = 25 °C
10
0.03
0.02
0.01
TJ = 125 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.2
1.2
2.0
ID = 250 µA
1.8
1.6
1.4
1.2
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
10-3
10-2
10-1
1
10
Time (s)
Single Pulse Power
100 600
100 µs
1
0.1
TA = 25 °C
Single Pulse
1 ms
BVDSS Limited
10 ms
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69056
S-83037-Rev. A, 22-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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