SI5424DC Datasheet PDF - Vishay Siliconix


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SI5424DC
Vishay Siliconix

Part Number SI5424DC
Description N-Channel 30-V (D-S) MOSFET
Page 11 Pages

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N-Channel 30-V (D-S) MOSFET
Si5424DC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
ChipFET 1206-8
1
ID (A)a
6
6
Qg (Typ.)
11 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
APPLICATIONS
Load Switch
- Notebook PC
D
DD
D
D
S
D
G
Bottom View
Marking Code
AF XXX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si5424DC-T1-E3 (Lead (Pb)-free)
Si5424DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 25
6a
6a
6a
6a
40
5.2a
2.1b, c
16
12.8
6.25
4
2.5b, c
1.6b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Foot (Drain)
t5s
Steady State
RthJA
RthJF
40
15
50
°C/W
20
Notes:
a. Package limited.
b. Surface Mounted on 1” x 1” FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/doc?73257). The ChipFET 1206-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 73776
S-83054-Rev. B, 29-Dec-08
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Si5424DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 25 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 4.8 A
VGS = 4.5 V, ID = 4.22 A
VDS = 15 V, ID = 4.8 A
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 4.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 15 V, VGS = 4.5 V, ID = 4.8 A
f = 1 MHz
VDD = 15 V, RL = 2.63 Ω
ID 5.7 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 2.5 Ω
ID 6 A, VGEN = 10 V, Rg = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 4.3 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.1
40
Typ. Max. Unit
19.4
- 4.6
0.020
0.024
17
2.3
± 100
1
10
0.024
0.030
V
mV/°C
V
ns
µA
A
Ω
S
950
230 pF
180
21 32
11 17
nC
3.2
4.2
2.2 Ω
17 26
75 113
22 33
12 18
ns
10 15
38 57
26 40
9 14
6
A
40
0.8 1.2
V
24 36 ns
11 17 nC
9
ns
15
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73776
S-83054-Rev. B, 29-Dec-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
VGS = 4 V
VGS = 10 thru 5 V
30
5
4
3
20
VGS = 3 V
2
10
0
0.0
0.04
VGS = 2 V
0.6 1.2 1.8 2.4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
1
0
0.0
1500
Si5424DC
Vishay Siliconix
TJ = 25 °C
TJ = 125 °C
TJ = - 55 °C
0.6 1.2 1.8 2.4 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0
8 16 24 32 40
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 6 A
8
6
VDS = 15 V
VDS = 24 V
4
2
0
0 6 12 18
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73776
S-83054-Rev. B, 29-Dec-08
24
1200
900
Ciss
600
300
Crss
Coss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
30
1.6
VGS = 10 V, ID = 4.8 A
1.4
1.2 VGS = 4.5 V,
ID = 4.2 A
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si5424DC
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
10
TA = 150 °C
1
0.06
0.05
0.04
0.1
0.01
TA = 25 °C
0.03
0.02
0.01
ID = 4.8 A
TA = 125 °C
TA = 25 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
2.0
1.8
1.6
ID = 250 µA
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
10-3
10-2
10-1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by RDS(on)*
10 1 ms
10 ms
1 100 ms
1s
10 s
0.1
DC
0.01
BVDSS Limited
TA = 25 C
Single Pulse
0.001
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 73776
S-83054-Rev. B, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




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