SI4992EY Datasheet PDF - Vishay Siliconix


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SI4992EY
Vishay Siliconix

Part Number SI4992EY
Description Dual N-Channel 75-V (D-S) MOSFET
Page 9 Pages

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Dual N-Channel 75-V (D-S) MOSFET
Si4992EY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
75 0.048 at VGS = 10 V
0.062 at VGS = 4.5 V
ID (A)
4.8
4.2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• High-Efficiency PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4992EY-T1-E3 (Lead (Pb)-free)
Si4992EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 75
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 85 °C
ID
4.8 3.6
3.7 2.8
Continuous Source Currenta
IS 2 1.1
Pulsed Drain Current
IDM 20
Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
IAS
EAS
8
3.2
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
2.4
1.4
1.4
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
85
31
Maximum
62.5
110
37
Unit
°C/W
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
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Si4992EY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea RDS(on)
VGS = 10 V, ID = 4.8 A
VGS = 4.5 V, ID = 4.2 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.8 A
Diode Forward Voltagea
VSD IS = 2.4 A, VGS = 0 V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 38 V, VGS = 10 V, ID = 4.8 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 38 V, RL = 38 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.4 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
1
20
Typ.
Max.
3
± 100
1
20
0.039
0.050
16
0.8
0.048
0.062
1.2
Unit
V
nA
µA
A
Ω
S
V
14 21
2.4 nC
3.5
3.6 Ω
7 15
10 15
22 35 ns
10 15
25 50
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 20
VGS = 10 V thru 4 V
16
16
12 12
88
4
3V
0
012345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
4
0
0
TC = 150 °C
25 °C
- 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
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Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
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Si4992EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
VGS = 4.5 V
VGS = 10 V
4 8 12 16 20
900
800
700
Ciss
600
500
400
300
200
Coss
100
Crss
0
0.0 12.5 25.0
37.5
50.0
62.5
ID - Drain Current (A)
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
Capacitance
75.0
10
VDS = 50 V
ID = 4.8 A
8
6
4
2
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
15
2.2
2.0
VGS = 10 V
ID = 4.8 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
30 0.10
TJ = 175 °C
10
0.08
0.06
ID = 4.8 V
TJ = 25 °C
0.04
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
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Si4992EY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6 60
0.4
0.2 ID = 250 µA
0.0
50
40
- 0.2
30
- 0.4
- 0.6
- 0.8
20
10
- 1.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by RDS(on)*
10
IDM Limited
P(t) = 0.0001
2
1
Duty Cycle = 0.5
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
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Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
Document Number: 73082
S09-1341-Rev. C, 13-Jul-09
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