SI4946BEY Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI4946BEY
Vishay Siliconix

Part Number SI4946BEY
Description Dual N-Channel 60-V (D-S) MOSFET
Page 10 Pages

SI4946BEY datasheet pdf
View PDF for PC
SI4946BEY pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Si4946BEY
Vishay Siliconix
Dual N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60 0.041 at VGS = 10 V
0.052 at VGS = 4.5 V
ID (A)
6.5
5.8
Qg (Typ.)
9.2 nC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % Rg Tested
• Compliant to RoHS directive 2002/95/EC
D1 D2
G1 G2
Top View
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
60
± 20
6.5
5.5
5.3a, b
4.4a, b
30
3.1
2a, b
12
7.2
3.7
2.6
2.4a, b
1.7a, b
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum Junction-to-Ambienta, c
t 10 s
RthJA
50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
33
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
Maximum
62.5
41
Unit
°C/W
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4946BEY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5.3 A
VGS = 4.5 V, ID = 4.7 A
Forward Transconductancea
Dynamicb
gfs VDS = 15 V, ID = 5.3 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 30 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 30 V, VGS = 10 V, ID = 5.3 A
Gate-Source Charge
Qgs VDS = 30 V, VGS = 5 V, ID = 5.3 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 6.8 Ω
ID 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 30 V, RL = 6.8 Ω
ID 4.4 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
60
1.0
30
3.1
Typ.
Max.
Unit
53
- 6.7
2.4
0.033
0.041
24
3.0
± 100
1
10
0.041
0.052
V
mV/°C
V
nA
µA
A
Ω
S
840
71
44
17 25
9.2 12
3.3
3.7
6.5 9.5
20 30
120 180
20 30
30 45
10 15
12 20
25 40
10 15
pF
nC
Ω
ns
3.1
A
30
0.8 1.2
V
25 50 ns
25 50 nC
18
ns
7
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V thru 5 V
25
10
8
20
4V
15
10
5
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
TC = 150 °C
2 25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.100
1200
0.080
0.060
0.040
VGS = 4.5 V
0.020
VGS = 10 V
0.000
0
5 10 15 20 25 30
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 5.3 A
8
VDS = 30 V
6
VDS = 48 V
4
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
1000
800
Ciss
600
400
200
Coss
0 Crss
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
60
2.2
ID = 5.3 A
2.0
1.8
VGS = 10 V
1.6
1.4 VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 0.10
10 TJ = 175 °C
0.08
0.06
ID = 5.3 A
TJ = 150 °C
TJ = 25 °C
0.04
0.02
TJ = 25 °C
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
ID = 250 µA
2.4
2.2
2.0
1.8
1.6
1.4
1.2
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
100
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
0
0.01
0.1
1
10 100 1000
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
10 Limited by RDS(on)*
100 µs
1 1 ms
10 ms
0.1 TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
Datasheet pdf - http://www.DataSheet4U.net/




SI4946BEY datasheet pdf
Download PDF
SI4946BEY pdf
View PDF for Mobile


Similiar Datasheets : SI4946BEY

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact