SI4936CDY Datasheet PDF - Vishay Siliconix


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SI4936CDY
Vishay Siliconix

Part Number SI4936CDY
Description Dual N-Channel 30-V (D-S) MOSFET
Page 10 Pages

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Si4936CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.040 at VGS = 10 V
30
0.050 at VGS = 4.5 V
ID (A)d
5.8
5.5
Qg (Typ.)
2.8 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
APPLICATIONS
• Low Current DC/DC Conversion
• Notebook System Power
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1
G1
Top View
Ordering Information: Si4936CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
D2
G2
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
5.8
4.6
5.0a, b
4.0a, b
20
1.9
1.4a, b
2.3
1.5
1.7a, b
1.1a, b
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 110 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
Typical
58
42
Maximum
75
55
Unit
°C/W
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New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 4.7 A
Forward Transconductancea
Dynamicb
gfs VDS = 10 V, ID = 5 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
VDD = 15 V, RL = 3.8 Ω
ID 4 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 3.8 Ω
ID 4 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 4 A, VGS = 0 V
IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
Typ.
Max.
Unit
30 V
32
- 5 mV/°C
1.2 3 V
± 100
nA
1
10 µA
15 A
0.033
0.041
0.040
0.050
Ω
15 S
325
60
30
69
2.8 4.2
1.1
0.8
0.6 2.8 5.6
12 18
13 20
16 25
11 17
48
9 18
11 20
8 15
pF
nC
Ω
ns
1.9
A
20
0.8 1.2
V
11 20 ns
4 8 nC
6
ns
5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 5
VGS = 10 V thru 4 V
4
15
3
10
2
5 VGS = 3 V
1
0
0.0
0.06
VGS = 1 V, 2 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0
0
400
0.05
0.04
0.03
VGS = 4.5 V
VGS = 10 V
300
200
100
Si4936CDY
Vishay Siliconix
TC = 25 °C
TC = 125 °C
TC = - 55 °C
123
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4
Ciss
Coss
0.02
0
5 10 15
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 5 A
8
20
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
VGS = 10 V; ID = 5 A
1.5
30
6
VDS = 15 V
VDS = 24 V
4
1.3
1.1
VGS = 4.5 V;
ID = 4.7 A
2 0.9
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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Si4936CDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
1
TJ = 25 °C
0.08
0.06
0.04
0.02
TJ = 125 °C
TJ = 25 °C
0.1
0.0 0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
2.3
2.1
1.9
ID = 250 µA
1.7
1.5
1.3
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
20
16
12
8
4
0
0.001 0.01 0.1
1 10 100
Time (s)
Single Pulse Power
1000
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100 µA
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s, DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69097
S09-0390-Rev. C, 09-Mar-09
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