SI4925DDY Datasheet PDF - Vishay Siliconix


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SI4925DDY
Vishay Siliconix

Part Number SI4925DDY
Description Dual P-Channel 30-V (D-S) MOSFET
Page 9 Pages

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Dual P-Channel 30-V (D-S) MOSFET
Si4925DDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.029 at VGS = - 10 V
0.041 at VGS = - 4.5 V
ID (A)d, e
-8
-8
Qg (Typ.)
15 nC
SO-8
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
100 % UIS Tested
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
S1
RoHS
COMPLIANT
S2
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
G1 G2
Top View
Ordering Information: Si4925DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
- 30
± 20
- 8.0e
- 8.0e
- 7.3a, b
- 5.9a, b
- 32e
- 4.1
- 2.0a, b
- 20
20
5.0
3.2
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
e. Limited by package.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
38
20
Maximum
50
25
Unit
°C/W
Document Number: 68969
S-82574-Rev. A, 27-Oct-08
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Si4925DDY
Vishay Siliconix
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS - 10 V, VGS = - 10 V
VGS = - 10 V, ID = - 7.3 A
VGS = - 4.5 V, ID = - 6.2 A
VDS = - 10 V, ID = - 9.1 A
Ciss
Coss
Crss
Qg
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A
f = 1 MHz
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 10 V, Rg = 1 Ω
VDD = - 15 V, RL = 15 Ω
ID - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
TC = 25 °C
IS = - 2 A, VGS = 0 V
IF = - 2 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
- 30
- 1.0
- 30
Typ.
- 31
4.5
0.024
0.033
23
1350
215
185
32
15
4
7.5
5.8
10
8
45
12
42
35
40
16
- 0.75
34
22
11
23
Max.
Unit
- 3.0
± 100
-1
-5
0.029
0.041
V
mV/°C
V
nA
µA
A
Ω
S
pF
50
25
nC
15
15
70
25
70
60
70
30
- 4.1
- 32
- 1.2
60
40
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68969
S-82574-Rev. A, 27-Oct-08



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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40 1.0
Si4925DDY
Vishay Siliconix
VGS = 10 thru 5 V
30
VGS = 4 V
20
10
0
0.0
0.08
VGS = 3 V
0.5 1.0 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
0.8
TC = - 55 °C
0.6
0.4
0.2
0.0
0.0
2400
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.06
0.04
0.02
VGS = 4.5 V
VGS = 10 V
0.00
0
10 20 30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 9.1 A
8
VDS = 15 V
6
VDS = 7.5 V
4
VDS = 22.5 V
40
2
0
0 9 18 27
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68969
S-82574-Rev. A, 27-Oct-08
36
1800
1200
Ciss
600
Crss
Coss
0
0 6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 7.3 A
1.5
30
1.2
VGS = 10 V
0.9
0.6
- 50
VGS = 4.5 V
- 25 0 25
50
75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4925DDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
10
TJ = 150 °C
1
TJ = 25 °C
0.08
0.06
ID = 7.3 A
TJ = 125 °C
0.1 0.04
0.01
TJ = - 50 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
0.02
TJ = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.4
ID = 250 µA
0.2 ID = 1 mA
0.0
- 0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
80
60
40
20
0
0.001 0.01 0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
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4
10
100 µs
1
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1 ms
10 ms
100 ms
10 s
1 s, DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 68969
S-82574-Rev. A, 27-Oct-08




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