SI4916DY Datasheet PDF - Vishay Siliconix


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SI4916DY
Vishay Siliconix

Part Number SI4916DY
Description Dual N-Channel 30-V (D-S) MOSFET
Page 13 Pages

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Si4916DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
RDS(on) (Ω)
0.018 at VGS = 10 V
0.023 at VGS = 4.5 V
0.018 at VGS = 10 V
0.022 at VGS = 4.5 V
ID (A)a Qg (Typ.)
10
6.6
8.5
10.5
8.9
9.3
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V at 1.0 A
IF (A)
2.0
D1 1
D1 2
G2 3
S2 4
SO-8
8 G1
7 S1/D2
6 S1/D2
5 S1/D2
Top View
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT® Plus Integrated Schottky
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
- Notebook
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
20
TC = 25 °C
10 10.5
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
8
7.5a, b, c
8.3
7.8a, b, c
TA = 70 °C
6a ,b, c
6.3a, b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM 40
40
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
3
1.7a, b, c
3.2
1.8a, b, c
PulseD Source-Drain Current
ISM 40
40
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.2
TC = 25 °C
3.3 3.5
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
2.1
1.9a, b, c
2.2
2.0a, b, c
TA = 70 °C
1.2a, b, c
1.3a, b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Unit
V
A
mJ
W
°C
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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Si4916DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Maximum Junction-to-Ambienta
t 10 s
RthJA
54
65
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
32
38
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
Channel-2
Typ.
Max.
47 60
30 35
Unit
°C/W
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID(on)
RDS(on)
gfs
VSD
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
VGS = 10 V, ID = 10.5 A
VGS = 4.5 V, ID = 8.5 A
VGS = 4.5 V, ID = 9.3 A
VDS = 15 V, ID = 10 A
VDS = 15 V, ID = 10.5 A
IS = 1.7 A, VGS = 0 V
IS = 1 A, VGS = 0 V
Qg Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = - 10.5 A
Gate Resistance
Rg
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
30
30
1.5
1.5
20
20
0.5
0.5
Typ.a Max.
Unit
24
25
-6
-6
0.0145
0.015
0.019
0.018
30
35
0.75
0.47
3.0
2.7
100
100
1
100
15
2000
0.018
0.018
0.023
0.022
1.1
0.5
V
mV/°C
V
nA
µA
A
Ω
S
V
6.6 10
8.9 14
2.9
nC
3.4
2.3
2.4
1.9 2.9
2.3 3.5
Ω
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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Si4916DY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
trr
Qrr
ta
tb
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Min. Typ.a Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8 15
9 15
11 18
13 20
21 32
27 40 ns
6 10
9 15
28 40
24 35
17
nC
12
12
11
ns
16
13
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
VF
IF = 1.0 A
IF = 1.0 A, TJ = 125 °C
VR = 30 V
Maximum Reverse Leakage Current Irm
VR = 30 V, TJ = 100 °C
VR = - 30 V, TJ = 125 °C
Junction Capacitance
CT
VR = 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
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Si4916DY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
0
0.00
VGS = 10 thru 5 V
4V
3V
0.30
0.60
0.90
1.20
VDS – Drain-to-Source Voltage (V)
Output Characteristics
1.50
40
35
30
25
20
15
TC = 125 °C
10
5 25 °C
- 55 °C
0
01234
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.025
0.022
0.019
VGS = 4.5 V
0.016
0.013
VGS = 10 V
0.010
0
5 10 15 20 25 30 35
ID – Drain Current (A)
On-Resistance vs. Drain Current
40
1050
900
750
600
450
300
150
0
0
Ciss
Crss
Coss
6 12 18 24
VDS – Drain-to-Source Voltage (V)
Capacitance
30
6
ID = 7.5 A
5
4
3
2
VDS = 10 V
VDS = 15 V
1.6
VGS = 10 V and 4.5 V
ID = 7.5 A
1.4
1.2
1.0
1 0.8
0
0123456789
Qg – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




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