SI4914BDY Datasheet PDF - Vishay Siliconix


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SI4914BDY
Vishay Siliconix

Part Number SI4914BDY
Description Dual N-Channel 30-V (D-S) MOSFET
Page 15 Pages

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Si4914BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
RDS(on) (Ω)
0.021 at VGS = 10 V
0.027 at VGS = 4.5 V
0.020 at VGS = 10 V
0.025 at VGS = 4.5 V
ID (A)a Qg (Typ.)
8.4
6.7
7.4
8d
7.0
8d
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V at 1.0 A
IF (A)
2.0
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Integrated Schottky
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power dc-to-dc
D1
D1 1
D1 2
G2 3
S2 4
SO-8
8 G1
7 S1/D2
6 S1/D2
5 S1/D2
Top View
Ordering Information:Si4914BDY-T1-E3 (Lead (Pb)-free)
Si4914BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
20
TC = 25 °C
8.4 8d
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
ID
6.7
6.7b, c
7.4
7.4b, c
TA = 70 °C
5.3b, c
5.7b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM 40
40
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
2.4
1.0b, c
2.8
1.1b, c
PulseD Source-Drain Current
ISM 40
40
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
15
11.2
TC = 25 °C
2.7 3.1
Maximum Power Dissipationa, b
TC = 70 °C
TA = 25 °C
PD
1.7
1.7b, c
2.0
2.0b, c
TA = 70 °C
1.1b, c
1.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Package limited.
Unit
V
A
mJ
W
°C
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
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Si4914BDY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Maximum Junction-to-Ambienta
t 10 s
RthJA
59
70
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
36
45
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.
Channel-2
Typ.
Max.
52 62.5
32 40
Unit
°C/W
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb RDS(on)
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
gfs
VSD
Qg
Qgs
Qgd
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8 A
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 6 A
VGS = 4.5 V, ID = 6 A
VDS = 15 V, ID = 8 A
VDS = 15 V, ID = 8 A
IS = 1.7 A, VGS = 0 V
IS = 1 A, VGS = 0 V
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Channel-2
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Gate Resistance
Rg
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
30
30
1.2
1.2
20
20
Typ.a Max.
Unit
V
35
- 6.2
mV/°C
2.7
2.7
100
100
1
100
15
10000
V
nA
µA
A
0.0165
0.0155
0.0215
0.020
29
33
0.77
0.46
0.021
0.020
0.027
0.025
1.1
0.5
Ω
S
V
6.7 10.5
7.0 11.0
2.8
nC
2.8
2.0
2.0
2.9 6.0
2.0 4.0
Ω
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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
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Si4914BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Source-Drain Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 A/µs
Min. Typ.a Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
9 18
10 20
10 20
9 18
16 32
16 32 ns
9 18
8 16
35 55
21 35
40
nC
11
19
11
ns
16
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
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Si4914BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 2.0
VGS = 10 V thru 5 V
40
4V
30
20
1.6
1.2
TC = 25 °C
0.8
10
0
0
0.05
0.04
3V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.4
0
0
1000
800
TC = 125 °C
TJ = - 55 °C
12345
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
0.03
0.02
0.01
VGS = 4.5 V
VGS = 10 V
0
0 10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 8 A
8
VDS = 10 V
VDS = 15 V
6
VDS = 20 V
4
50
600
400
200 Coss
0 Crss
0
6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
ID = 7 A
1.5
VGS = 10 V
30
1.3
VGS = 4.5 V
1.1
2 0.9
0
0
3.2
6.4
9.6
12.8
16.0
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Document Number: 69654
S09-2109-Rev. E, 12-Oct-09
Datasheet pdf - http://www.DataSheet4U.net/




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