SI4904DY Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI4904DY
Vishay Siliconix

Part Number SI4904DY
Description Dual N-Channel 40-V MOSFET
Page 10 Pages

SI4904DY datasheet pdf
View PDF for PC
SI4904DY pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Dual N-Channel 40-V MOSFET
Si4904DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 10 V
40
0.019 at VGS = 4.5 V
ID (A)
8
8
Qg (Typ.)
56
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4904DY-T1-E3 (Lead (Pb)-free)
Si4904DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
UIS Tested
APPLICATIONS
CCFL Inverter
D1 D2
G1 G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
ISM
IAS
EAS
PD
TJ, Tstg
Limit
40
± 16
8
8
8b, c
6.5b, c
20
2.7
1.6b, c
20
20
20
3.25
2.10
2.0b, c
1.25b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady-State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
Symbol
RthJA
RthJF
Typ.
45
29
Max.
62.5
38
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4904DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
ID = 250 µA
ID = 250 µA
VDS = VGS, ID= 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb
Forward Transconductanceb
RDS(on)
gfs
VGS = 10 V, ID = 5 A
VGS = 4.5 V, ID = 4 A
VDS = 15 V, ID = 5 A
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Ciss
Coss
Crss
Qg
N-Channel
VDS = 20 V, VGS = 0 V, ID = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5 A
f = 1 MHz
N-Channel
VDD = 20 V, RL = 4 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
N-Channel
VDD = 20 V, RL =4 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VSD IS = 1.5 A
trr
Qrr N-Channel
ta IF = 2 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
Min.
40
0.8
20
Typ.
40
- 4.8
0.013
0.015
23
2390
270
165
56
26
5.5
9.7
2.6
15
20
56
10
88
117
62
19
0.69
62
62
26
36
Max.
Unit
2.0
100
1
10
0.016
0.019
V
mV/°C
V
nA
µA
A
Ω
S
pF
85
40
nC
4.0
23
30
85
15
ns
135
180
95
30
2.7
A
20
1.2 V
95 ns
95 nC
nS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 1.2
VGS = 10 thru 3 V
1.0
16
0.8
12
0.6
8
0.4
4
2V
0.2
0
0.0 0.6 1.2 1.8 2.4 3.0
VDS – Drain-to-Source Voltage (V)
Output Characteristics
0.0
0.0
0.020
3500
Si4904DY
Vishay Siliconix
TC = 125 °C
25 °C
- 55 °C
0.6 1.2 1.8 2.4
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
0.018
0.016
0.014
0.012
VGS = 4.5 V
VGS = 10 V
0.010
0 4 8 12 16 20
ID – Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 5 A
8
VDS = 10 V
6 VDS = 20 V
4
VDS = 30 V
2
2800
2100
Ciss
1400
700
Coss
Crss
0
0
8
16 24 32
VDS – Drain-to-Source Voltage (V)
Capacitance
40
1.8
ID = 5 A
1.5
VGS = 10 V
VGS = 4.5 V
1.2
0.9
0
0 12 24 36 48 60
Qg – Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.10
20 TJ = 150 °C
10
0.08
ID = 5 A
TJ = 25 °C
1
0.1
0.01
0.0
0.2 0.4
0.6 0.8
1.0
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
ID = 250 µA
0.2
0 ID = 5 mA
- 0.2
- 0.4
- 0.6
0.06
0.04
0.02
TA = 125 °C
TA = 25 °C
0
0 1 2 3 4 5 6 7 8 9 10
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
10
1 ms
1
10 ms
100 ms
0.1 TA = 25 °C
Single Pulse
1s
10 s
DC
0.01
0.1 1 10 100
VDS – Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73793
S09-0540-Rev. C, 06-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




SI4904DY datasheet pdf
Download PDF
SI4904DY pdf
View PDF for Mobile


Similiar Datasheets : SI4904DY

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact