SI4866BDY Datasheet PDF - Vishay Siliconix


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SI4866BDY
Vishay Siliconix

Part Number SI4866BDY
Description N-Channel 12-V (D-S) MOSFET
Page 10 Pages

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N-Channel 12-V (D-S) MOSFET
Si4866BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0053 at VGS = 4.5 V
12 0.006 at VGS = 2.5 V
0.0074 at VGS = 1.8 V
ID (A)a
21.5
20.2
18.2
Qg (Typ.)
29.5 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4866BDY-T1-E3 (Lead (Pb)-free)
Si4866BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Rectifier
• Point-of-Load Synchronous Buck Converter
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
12
±8
21.5
17.2
16.1b,c
12.9b,c
50
4.0
2.3b,c
20
20
4.45
2.85
2.50b,c
1.6b,c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
40
23
Maximum
50
28
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
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Si4866BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 12 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 10 A
VGS = 1.8 V, ID = 8 A
Forward Transconductancea
gfs VDS = 15 V, ID = 12 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 6 V, VGS = 4.5 V, ID = 10 A
Gate-Source Charge
Qgs VDS = 6 V, VGS = 2.5 V, ID = 10 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 6 V, RL = 1.2 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 6 V, RL = 1.2 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2.3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 9.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
12
0.4
20
Typ.
Max.
Unit
12
- 3.5
0.0042
0.0048
0.006
80
1.0
± 100
1
10
0.0053
0.0060
0.0074
V
mV/°C
V
nA
µA
A
Ω
S
5020
1305
805
52
29.5
6.2
8.9
0.8
26
18
85
32
13
12
57
9
0.62
50
35
19
31
80
45
1.3
40
30
130
50
25
24
90
18
4
50
1.1
80
55
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 2.0
1.5 V
40 1.6
30 1.2
Si4866BDY
Vishay Siliconix
25 °C
20 0.8 TC = 125 °C
10
0
0.0
0.0065
0.0060
1V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
VGS = 1.8 V
2.5
0.4
0.0
0.0
7000
- 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
5600
Ciss
0.0055
0.0050
VGS = 2.5 V
0.0045
VGS = 4.5 V
0.0040
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
4.5
ID = 10 A
3.6
2.7
VDS = 4 V
VDS = 6 V
1.8 VDS = 8 V
0.9
4200
2800
1400
0
0
Crss
24
Coss
6 8 10
VDS - Drain-to-Source Voltage (V)
Capacitance
1.5
ID = 12 A
1.3 VGS = 1.8 V
12
VGS = 4.5 V
1.1
0.9
0.0
0
11 22 33 44
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
55
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.020
ID = 12 A
10 0.016
150 °C
1
0.012
25 °C
0.1
0.008
125 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.004
25 °C
0.000
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.3 200
160
0.1
- 0.1
- 0.3
ID = 5 mA
ID = 250 µA
120
80
40
- 0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1 100 ms
1s
10 s
0.1 DC
TA = 25 °C
Single Pulse
0.01
0.01
0.1
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




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