SI4840BDY Datasheet PDF - Vishay Siliconix


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SI4840BDY
Vishay Siliconix

Part Number SI4840BDY
Description N-Channel 40-V (D-S) MOSFET
Page 10 Pages

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N-Channel 40-V (D-S) MOSFET
Si4840BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.009 at VGS = 10 V
40
0.012 at VGS = 4.5 V
ID (A)d
19
16
Qg (Typ.)
15 nC
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4840BDY-T1-E3 (Lead (Pb)-free)
Si4840BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS directive 2002/95/EC
APPLICATIONS
• Synchronous Rectification
• POL, IBC
- Secondary Side
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Limit
40
± 20
19
15
12.4a, b
9.9a, b
50
15
11
5
2.1a, b
6
3.8
2.5a, b
1.6a, b
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
Symbol
RthJA
RthJF
Typical
37
17
Maximum
50
21
Unit
°C/W
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
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Si4840BDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
ID = 250 µA
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VGS = 10 V, ID = 12.4 A
VGS = 4.5 V, ID = 10.8 A
VDS = 15 V, ID = 12.4 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 10 V, VGS = 10 V, ID = 12.4 A
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
VDS = 10 V, VGS = 4.5 V, ID = 12.4 A
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Min.
40
1
50
Typ. Max. Unit
40
-6
0.0074
0.0095
56
3
± 100
1
5
0.009
0.012
V
mV/°C
V
nA
µA
A
Ω
S
2000
260
150
33
15
6.7
5.1
1.4
25
12
25
10
10
15
30
10
0.8
30
26
17.5
12.5
50
23
2.1
40
20
40
15
15
25
45
15
30
50
1.2
60
52
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 10
VGS = 10 V thru 4 V
40
8
Si4840BDY
Vishay Siliconix
30
20
10
0
0
0.012
3V
2V
0.4 0.8 1.2 1.6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
0.010
0.008
0.006
VGS = 4.5 V
VGS = 10 V
0.004
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
VDS = 20 V
8 ID = 12.4 A
6
4
2
0
0 5 10 15 20 25 30 35
Qg - Total Gate Charge (nC)
Gate Charge
6
TC = 25 °C
4
2 TC = 125 °C
0 TC = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2400
2000
Ciss
1600
1200
800
Coss
400
Crss
0
0 5 10 15 20 25 30 35 40
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 12.4 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
www.vishay.com
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Si4840BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60 0.030
0.025
ID = 12.4 A
TJ = 150 °C
10
0.020
0.015
125 °C
TJ = 25 °C
0.010
0.005
25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
ID = 250 µA
2.2
2.0
1.8
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
1.6 20
1.4
10
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1 1 10 100 600
Time (s)
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 µs
10
1 ms
1 10 ms
100 ms
0.1 1 s
10 s
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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Document Number: 69795
S09-0532-Rev. C, 06-Apr-09
Datasheet pdf - http://www.DataSheet4U.net/




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