SI4838BDY Datasheet PDF - Vishay Siliconix


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SI4838BDY
Vishay Siliconix

Part Number SI4838BDY
Description N-Channel 12-V (D-S) MOSFET
Page 10 Pages

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Si4838BDY
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0027 at VGS = 4.5 V
12 0.0032 at VGS = 2.5 V
0.0040 at VGS = 1.8 V
ID (A)a
34
31
28
Qg (Typ.)
33 nC
FEATURES
Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
Low VIN DC/DC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit
12
±8
34
27
22.5b, c
18.0b, c
70
5.1
2.2b, c
20
20
5.7
3.6
2.50b, c
1.6b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb,d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
t 10 s
Steady State
Symbol
RthJA
RthJF
Typical
39
18
Maximum
50
22
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 68964
S-82662-Rev. A, 03-Nov-08
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Si4838BDY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
VDS = 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 15 A
Drain-Source On-State Resistancea
RDS(on)
VGS = 2.5 V, ID = 12 A
VGS = 1.8 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 6 V, VGS = 4.5 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 6 V, VGS = 2.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 6 V, RL = 0.6 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 6 V, RL = 0.6 Ω
ID 10 A, VGEN = 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
12
0.4
30
0.2
Typ.
Max.
Unit
12
- 3.2
0.0021
0.0025
0.0031
105
1.0
± 100
1
10
0.0027
0.0032
0.0040
V
mV/°C
V
nA
µA
A
Ω
S
5760
1730
1145
56
33
5.9
12.5
0.65
25
29
140
35
12
13
56
10
0.60
52
40
21
31
84
50
1.3
50
55
240
65
24
26
100
20
5.1
70
1.1
100
80
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68964
S-82662-Rev. A, 03-Nov-08
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70 5
Si4838BDY
Vishay Siliconix
56
VGS = 5 thru 1.5 V
42
4
TC = 25 °C
3
28
14
0
0.0
0.0038
VGS = 1 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
2
1
0
0.0
8000
TC = 125 °C
TC = - 55 °C
0.3 0.6 0.9 1.2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.5
0.0034
0.0030
0.0026
0.0022
VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
0.0018
0
14 28 42 56 70
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
8.0
ID = 10 A
6.4
VDS = 4 V
4.8 VDS = 6 V
3.2 VDS = 8 V
1.6
6400
4800
Ciss
3200
Coss
1600
Crss
0
0.0 2.4 4.8 7.2 9.6
VDS - Drain-to-Source Voltage (V)
Capacitance
12.0
1.5
ID = 15 A
1.3
1.1
VGS = 2.5 V
VGS = 4.5V
0.9
0.0
0
20 40 60 80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68964
S-82662-Rev. A, 03-Nov-08
100
0.7
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si4838BDY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.015
10 TJ = 150 °C
0.012
1 TJ = 25 °C
0.009
ID = 15 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.4
0.006
0.003
TJ = 125 °C
TJ = 25 °C
0.000
012345
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
170
0.2 136
0.0
- 0.2
- 0.4
ID = 5 mA
ID = 250 µA
102
68
34
- 0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
100
Limited by RDS(on)*
10 1 ms
10 ms
1
0.1
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.01 0.1 1 10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at whicht RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 68964
S-82662-Rev. A, 03-Nov-08
Datasheet pdf - http://www.DataSheet4U.net/




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