SI4830CDY Datasheet PDF - Vishay Siliconix


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SI4830CDY
Vishay Siliconix

Part Number SI4830CDY
Description Dual N-Channel 30-V (D-S) MOSFET
Page 15 Pages

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Si4830CDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1 30
0.020 at VGS = 10 V
0.025 at VGS = 4.5 V
Channel-2 30
0.020 at VGS = 10 V
0.025 at VGS = 4.5 V
ID (A)a, e Qg (Typ.)
8.0 7.3
8.0
8.0
7.3
8.0
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.51 V at 1.0 A
IF (A)a
2.0
S1/D2
G1
S2
G2
1
2
3
4
SO-8
8 D1
7 D1
6 S1/D2
5 S1/D2
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Schottky
• PWM Optimized
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
D1
D2
Schottky Diode
G1 G2
Top View
Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free)
Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
VDS 30
30
Gate-Source Voltage
VGS ± 20
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
8.0e
7.1
7.5b, c
8.0e
7.1
7.5b, c
Pulsed Drain Current (10 µs Pulse Width)
TA = 70 °C
IDM
5.8b, c
30
5.8b, c
30
Source-Drain Current Diode Current
Pulsed Source-Drain Current
TC = 25 °C
TA = 25 °C
IS
ISM
2.6
1.8b, c
30
2.6
1.8b, c
30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
10
5
2.9
10
5
2.9
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.8
2b, c
1.8
2b, c
TA = 70 °C
1.2b, c
1.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t 10 s
RthJA
52
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
62.5
43
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Channel-2
Typ. Max.
52 62.5
35 43
Unit
°C/W
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Si4830CDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 1 mA
ID = 250 µA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 1 mA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 8 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 8 A
VGS = 4.5 V, ID = 5 A
VGS = 4.5 V, ID = 5 A
Forward Transconductanceb
gfs
VDS = 15 V, ID = 8 A
VDS = 15 V, ID = 8 A
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 15 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 15 V, VGS = 10 V, ID = 8 A
Qg VDS = 15 V, VGS = 10 V, ID = 8 A
Channel-1
VDS = 15 V, VGS = 4.5 V, ID = 8 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 4.5 V, ID = 8 A
Gate Resistance
Rg
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
f = 1 MHz
Min. Typ.a Max. Unit
Ch-1
Ch-2
Ch-1
Ch-1
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30
V
30
32
mV/°C
-6
13
V
13
100
nA
100
0.001
0.016 0.10
0.025
mA
1.1 10
20
A
20
0.0156 0.020
0.0156 0.020
0.019 0.025
Ω
0.019 0.025
29
S
29
Ch-1
950
Ch-2
950
Ch-1
155
Ch-2
185
Ch-1
65
Ch-2
65
Ch-1
16.5 25
Ch-2
16.5 25
Ch-1
7.3 11
Ch-2
7.3 11
Ch-1
2.7
Ch-2
2.7
Ch-1
2.1
Ch-2
2.1
Ch-1 0.2 1.2 2.4
Ch-2 0.2 1.2 2.4
pF
nC
Ω
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Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
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Si4830CDY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
tf
IS
Channel-1
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
Channel-2
VDD = 15 V, RL = 3 Ω
ID 5 A, VGEN = 4.5 V, Rg = 1 Ω
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 1 A
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Channel-1
Qrr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta Channel-2
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
tb
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.a Max.
9 18
10 20
11 20
10 20
18 35
18 35
8 16
9 18
17 35
17 35
12 24
12 24
18 35
19 35
10 20
10 20
2.6
2.6
30
30
0.74 1.1
0.46 0.51
17 34
17 34
9 18
7 14
10
9
7
8
Unit
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
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Si4830CDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 30
VGS = 10 V thru 4 V
24
24
18 18
12
VGS = 3 V
6
0
0.0
0.024
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.022
0.020
VGS = 4.5 V
12
6
0
0
1200
960
720
TC = 25 °C
TC = 125 °C
12
TC = - 55 °C
34
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
Ciss
0.018
0.016
VGS = 10 V
0.014
0
6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 8 A
8
VDS = 10 V
6
VDS = 15 V
VDS = 20 V
4
30
2
0
0.0
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3.6
7.2
10.8
14.4
Qg - Total Gate Charge (nC)
Gate Charge
18.0
480
Coss
240
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 8 A
1.6
1.4
VGS = 10 V
30
1.2 VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
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