SI4816BDY Datasheet PDF - Vishay Siliconix


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SI4816BDY
Vishay Siliconix

Part Number SI4816BDY
Description Dual N-Channel 30-V (D-S) MOSFET
Page 13 Pages

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Si4816BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Channel-1
Channel-2
0.0185 at VGS = 10 V
0.0225 at VGS = 4.5 V
30
0.0115 at VGS = 10 V
0.016 at VGS = 4.5 V
ID (A)
6.8
6.0
11.4
9.5
Qg (Typ.)
7.8
11.6
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V at 1.0 A
IF (A)
2.0
G1
A/S2
A/S2
G2
1
2
3
4
SO-8
8 D1
7 D2/S1
6 D2/S1
5 D2/S1
Top View
Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free)
Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
Schottky Diode
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Channel-1
Channel-2
Parameter
Symbol
10 s
Steady State 10 s Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
6.8
5.5
5.8 11.4 8.2
4.6 9.0 6.5
Pulsed Drain Current
IDM 30
40
Continuous Source Current (Diode Conduction)a
IS 1
0.9 2.2 1.15
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
20
20
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
1.4
0.9
1.0 2.4 1.25
0.64 1.5
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
t 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Channel-1
Typ. Max.
72 90
100 125
51 63
Channel-2
Typ. Max.
43 53
82 100
25 30
Schottky
Typ. Max.
48 60
80 100
28 35
Unit
°C/W
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Si4816BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 85 °C
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID(on)
RDS(on)
gfs
VSD
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.8 A
VGS = 10 V, ID = 11.4 A
VGS = 4.5 V, ID = 6.0 A
VGS = 4.5 V, ID = 9.5 A
VDS = 15 V, ID = 6.8 A
VDS = 15 V, ID = 11.4 A
IS = 1 A, VGS = 0 V
IS = 1 A, VGS = 0 V
Qg Channel-1
VDS = 15 V, VGS = 5 V, ID = 6.8 A
Qgs
Channel-2
Qgd VDS = 15 V, VGS = 5 V, ID = - 11.4 A
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
td(on)
tr
Channel-1
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Channel-2
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
Source-Drain Reverse Recovery Time
trr
IF = 1.3 A, dI/dt = 100 A/µs
IF = 2.2 A, dI/dt = 100 µA/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
1.0
1.0
20
30
1.5
0.9
Typ.a Max.
3.0
3.0
100
100
1
100
15
2000
0.0155
0.0093
0.0185
0.013
30
31
0.73
0.47
0.0185
0.0115
0.0225
0.016
1.1
0.5
7.8 10
11.6 18
2.9
4.8
2.3
3.7
3.0 4.5
1.8 2.7
11 17
13 20
9 15
9 15
24 40
31 50
9 15
11 17
20 35
25 40
Unit
V
nA
µA
A
Ω
S
V
nC
Ω
ns
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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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Si4816BDY
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
VF
IF = 1.0 A
IF = 1.0 A, TJ = 125 °C
VR = 30 V
Maximum Reverse Leakage Current Irm
VR = 30 V, TJ = 100 °C
VR = - 30 V, TJ = 125 °C
Junction Capacitance
CT
VR = 10 V
Min.
Typ.
0.47
0.36
0.004
0.7
3.0
50
Max.
0.50
0.42
0.100
10
20
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
35
30
25
20
15
10
5
0
0
VGS = 10 thru 4 V
3V
2V
1234
VDS – Drain-to-Source Voltage (V)
Output Characteristics
5
40
35
30
25
20
15
TC = 125 °C
10
5 25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
Transfer Characteristics
0.05 1200
0.04
0.03
0.02
0.01
VGS = 4.5 V
VGS = 10 V
0.00
0
5 10 15 20 25 30 35
ID – Drain Current (A)
On-Resistance vs. Drain Current
40
1000
800
600
400
200
0
0
Ciss
Crss
Coss
5 10 15 20 25
VDS – Drain-to-Source Voltage (V)
Capacitance
30
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
VDS = 15 V
5 ID = 6.8 A
4
3
2
1
1.6
VGS = 10 V
ID = 6.8 A
1.4
1.2
1.0
0.8
0
0 2 4 6 8 10
Qg – Total Gate Charge (nC)
Gate Charge
40
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ – Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
TJ = 150 °C
10
TJ = 25 °C
0.04
0.03
0.02
ID = 6.8 A
0.01
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
ID = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ – Temperature (°C)
Threshold Voltage
0.00
0 2 4 6 8 10
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
80
60
40
20
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
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Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
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