SI4812BDY Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI4812BDY
Vishay Siliconix

Part Number SI4812BDY
Description N-Channel 30-V (D-S) MOSFET
Page 9 Pages

SI4812BDY datasheet pdf
View PDF for PC
SI4812BDY pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
Si4812BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.016 at VGS = 10 V
0.021 at VGS = 4.5 V
ID (A)
9.5
7.7
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V at 1.0 A
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
IF (A)
1.4
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT® Plus Power MOSFET
• 100 % Rg Tested
D
Schottky Diode
G
Top View
Ordering Information: Si4812BDY-T1-E3 (Lead (Pb)-free)
Si4812BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)a, b
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Single Pulse Avalanche Current
Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Symbol
VDS
VGS
ID
IDM
IS
IF
IFM
IAS
EAS
PD
TJ, Tstg
10 s
9.5
7.7
2.1
1.4
2.5
1.6
2.0
1.3
Limit
Steady State
30
30
± 20
7.3
5.9
50
1.2
0.8
30
5
1.25
1.4
0.9
1.2
0.8
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t 10 s)a
Maximum Junction-to-Ambient (t = Steady State)a
Maximum Junction-to-Foot (t = Steady State)a
Notes:
a. Surface Mounted on FR4 board.
b. t 10 s.
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
40
50
72
85
18
24
Maximum
50
60
90
100
23
30
Unit
°C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4812BDY
Vishay Siliconix
MOSFET AND SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
(MOSFET and Schottky)
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS = 30 V, VGS = 0 V, TJ = 125 °C
VDS 5 V, VGS = 10 V
1
0.004
0.7
3.0
20
Drain-Source On-State Resistancea
Forward Transconductancea
Schottky Diode Forward Voltagea
Dynamicb
RDS(on)
gfs
VSD
VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 7.7 A
VDS = 15 V, ID = 9.5 A
IS = 1.0 A, VGS = 0 V
IS = 1.0 A, VGS = 0 V, TJ = 125 °C
0.013
0.0165
45
0.45
0.33
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
VDS = 15 V, VGS = 5 V, ID = 9.5 A
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.0 A, dI/dt = 100 A/µs
8.5
3
2.6
0.3 0.7
15
13
20
8
22
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Max.
3
± 100
0.100
10
20
0.016
0.021
0.50
0.42
13
1.1
25
20
30
15
35
Unit
V
nA
mA
A
Ω
S
V
nC
Ω
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 50
VGS = 10 thru 4 V
40
40
Si4812BDY
Vishay Siliconix
30 30
20
10
0
0
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0
6
5
4
3
2
1
0
0
3V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
VGS = 4.5 V
VGS = 10 V
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
60
VDS = 15 V
ID = 9.5 A
2468
Qg - Total Gate Charge (nC)
Gate Charge
10
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.5
4.0
1300
1040
Ciss
780
520
Coss
260 Crss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
1.4 ID = 9.5 A
30
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4812BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 0.05
TJ = 150 °C
10
TJ = 25 °C
1
0.04
0.03
0.02
0.01
ID = 9.5 A
0.1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
10
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
1 40
0.1
0.01
0.001
0.0001
30 V
20 V
10 V
30
20
10
0.00001
0
25 50 75 100 125
TJ - Junction Temperature (°C)
Reverse Current (Schottky)
150
100
0
0.01
0.1 1 10 100
Time (s)
Single Pulse Power (MOSFET)
600
Limited by
RDS(on)*
10
1
0.1 TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
4
Document Number: 73038
S-83039-Rev. D, 29-Dec-08
Datasheet pdf - http://www.DataSheet4U.net/




SI4812BDY datasheet pdf
Download PDF
SI4812BDY pdf
View PDF for Mobile


Similiar Datasheets : SI4812BDY

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact