SI4779CY Datasheet PDF - Vishay Siliconix


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SI4779CY
Vishay Siliconix

Part Number SI4779CY
Description High-Side N-Channel Switch
Page 8 Pages

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Si4779CY
Vishay Siliconix
High-Side N-Channel Switch with Current Limit
FEATURES
D User Set Over Current Limit From 400 mA to 2.4 A
D Low rDS(on) 45 mW (max) at 25_C
D Fault Indicator
D Under Voltage Lockout
APPLICATIONS
D Notebook Computers Power Management
D USB Power Distribution
D Hot Plug In Power Supplies
D Power Supply/Load Protection
D Battery-Charger Circuits
DESCRIPTION
The Si4779CY n-channel high-side switch combines a low
rDS(on) MOSFET switch with a user set, pulse gate control
(PGC) based current limit. This switch is designed to protect
the system power supply from overloads and short circuit
conditions in applications such as USB. The PGC based
approach to the current limiter provides the additional benefit
of keeping the MOSFET junction temperature within
specification, thereby eliminating the need for thermal
shutdown. The low quiescent current makes the Si4779CY
ideal for use in battery powered devices. The Si4779CY
operates on both 3-V and 5-V busses, and is packaged in the
LITTLE FOOTr SO-8 package.
FUNCTIONAL BLOCK DIAGRAM
IN OUT
FAULT
ON
GND
Document Number: 71664
S-04276—Rev. A, 16-Jul-01
Control
Circuit
SET
VR
See page 7 for a detailed block diagram.
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Si4779CY
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ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Steady State
Voltage, IN to GND
Voltage, ON
Continuous Drain Current (TJ = 150rC)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25rC
TA = 85rC
TA = 70rC
VIN
VON
ID
PD
Tj, Tstg
0.3 to 7
0.3 to 7
2.4
2.4
0.65
65 to 125
Unit
V
A
W
_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Voltage, IN to GND
Voltage, ON or FAULT to GND
Operating Temperature Range
Symbol
VIN
VON, VFAULT
TA
Steady State
3.0 to 5.0
0 to 5.0
0 to 85
Unit
V
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambienta
Junction-to-Foot (Drain)b
Steady State
RthJA
RthJF
98
37
120
_C/W
46
Notes
a. Surface mounted on 1x1FR4 board, 0.062thick, 2-oz copper double sided.
b. Junction-to-foot thermal impedance represents the effective thermal impedance of all heat carrying leads in parallel and is intended for use in conjunction with
the thermal impedance of the PC board pads to ambient (RthJA = RthJF + RthPCB-A). It can also be used to estimate chip temperature if power dissipation and
the lead temperature of a heat carrying (drain) lead is known.
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Document Number: 71664
S-04276Rev. A, 16-Jul-01
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Si4779CY
Vishay Siliconix
SPECIFICATIONS
Test Conditions Unless Specified
Parameter
Basic Operations
Symbol
TA = 25_C, VIN = 5 V
Min
Operating Voltage
On-State Resistance
Supply Current
ON Input Low Voltage
ON Input High Voltage
ON Input Current
Protection
VIN
rDS(on)
ISUP(off)
ISUP(on)
VONL
VONH
ION
VIN = 4.75 V, ID = 2 A
VIN = 3.0 V, ID = 2 A
ON = IN, VIN = 5.5 V, VOUT = 0 V
ON = GND, VIN = VOUT = 5.5 V, IOUT = 0 A
VIN = 2.7 to 5.5 V
VIN = 2.7 to 3.6 V
VIN = 4.5 to 5.5 V
VON = 5.5 V
2.7
2.0
2.4
Over Current Limit Rangeb
Under Voltage Lockout (falling edge)
Under Voltage Hysteresis
FAULT Output Voltage Lowb
FAULT Logic Output Leakage Current
Dynamicb
ILIMIT
UVLO
DUVLO
VFAULT
IFL
Tolerance = "20%, VIN = 5 V
ISINK = 100 mA
VIN = VFAULT = 5.5 V
0.4
2.0
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
Cycle Time
ton
VIN = 5 V, RL = 11 W, CL = 40 mF
tr
toff
tf VIN = 5 V, IOUT = 500 mA
tcyc VIN = 5 V, RL = 0.5 W
Notes
a. Typical values at TA = 25_C are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Guaranteed by design. Derived from ISET current ratio, current-limit amplifier and external set resistor accuracy.
Limits
Typa
0.035
0.045
0.01
2.3
0.1
0.01
3
3.5
1.5
0.5
8
Max
5.5
0.045
0.055
2
70
0.8
"1
2.4
2.6
0.4
1
Unit
V
W
mA
V
mA
A
V
mA
ms
ms
ms
TIMING DIAGRAMS
ON 50%
ON 50%
OUT
ton
50%
OUT
FIGURE 1.
Document Number: 71664
S-04276Rev. A, 16-Jul-01
50%
toff
ON
OUT 10%
trise
ON
90%
90%
OUT
FIGURE 2.
10%
tfall
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Si4779CY
Vishay Siliconix
TIMING DIAGRAMS
New Product
ON
VRSET
ILIMIT
tcyc
FIGURE 3.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
RSET vs. ILIMIT
2.5
2.0
VIN = 5 V
1.5
1.0
0.5
RSET value is measured in circuit
0.0
200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900
RSET (W)
Supply Current, Output Disalble vs.
Ambient Temperature Over Operating Voltage
1000
VIN = 5.5 V
100
Normalized On-Resistance
vs. Ambient Temperature
1.4
1.2
1.0
0.8
10
0.6
1
40 20
0
20 40 60 80
TA Ambient Temperature (_C)
100
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0.4
40 25 10 5
20 35 50 65 80 95
TA Ambient Temperature (_C)
Document Number: 71664
S-04276Rev. A, 16-Jul-01
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