SI4778DY Datasheet PDF - Vishay Siliconix


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SI4778DY
Vishay Siliconix

Part Number SI4778DY
Description N-Channel 25-V (D-S) MOSFET
Page 10 Pages

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N-Channel 25-V (D-S) MOSFET
Si4778DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.023 at VGS = 10 V
25
0.028 at VGS = 4.5 V
ID (A)
8a
8a
Qg (Typ.)
5.5 nC
SO-8
S1
S2
S3
G4
Top View
8D
7D
6D
5D
Ordering Information: Si4778DY-T1-E3 (Lead (Pb)-free)
Si4778DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Converter
• Gaming
Notebook System Power
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
25
± 16
8a
8a
8a, b, c
6.4b, c
30
4.2
2b, c
5
1.25
5
3.2
2.4b, c
1.5b, c
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
42
19
Maximum
53
25
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
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Si4778DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 7 A
VGS = 4.5 V, ID = 6.3 A
Forward Transconductancea
Dynamicb
gfs VDS = 10 V, ID = 7 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 13 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 13 V, VGS = 10 V, ID = 7 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 13 V, VGS = 4.5 V, ID = 7 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 13 V, RL = 2.3 Ω
ID 5.6 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 13 V, RL = 2.3 Ω
ID 5.6 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = 5.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Min.
25
1.0
20
Typ. Max. Unit
25
- 4.7
0.019
0.023
23
V
mV/°C
2.2
± 100
1
10
0.023
0.028
V
nA
µA
A
Ω
S
680
120 pF
55
12 18
5.5 8.5
nC
2
1.5
2.5 3.8
Ω
15 25
50 75
20 30
10 15
ns
10 15
12 20
15 25
10 15
2.3
A
30
0.8 1.2
V
15 30 ns
8 16 nC
8.5
ns
6.5
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 10
VGS = 10 thru 4 V
24
8
Si4778DY
Vishay Siliconix
18
VGS = 3 V
12
6
0
0.0
0.035
0.4 0.8 1.2 1.6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.0
0.030
0.025
0.020
VGS = 10 V
VGS = 4.5 V
0.015
0
6 12 18 24
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
10
ID = 7 A
8
VDS = 13 V
6
VDS = 24 V
4
6 TC = - 55 °C
4
2
0
0.0
900
TC = 25 °C
TC = 125 °C
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
3.0
750 Ciss
600
450
300
150
Crss
0
0
Coss
5 10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
25
1.6
ID = 7 A
1.4
VGS = 10 V, 4.5 V
1.2
1.0
2 0.8
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
www.vishay.com
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Si4778DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.08
ID = 7 A
0.06
TJ = 150 °C
10
TJ = 25 °C
0.04
TA = 125 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.0
1.8 ID = 250 µA
1.6
1.4
1.2
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0.02
TA = 25 °C
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1
1 10 100
Time (s)
Single Pulse Power
1000
10
100 µs
1 ms
1 10 ms
100 ms
1s
0.1 10 s
0.01
0.1
TA = 25 °C
Single Pulse
1
BVDSS
Limited
10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69817
S09-0394-Rev. B, 09-Mar-09
Datasheet pdf - http://www.DataSheet4U.net/




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