SI4776DY Datasheet PDF - Vishay Siliconix


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SI4776DY
Vishay Siliconix

Part Number SI4776DY
Description N-Channel 30 V (D-S) MOSFET
Page 7 Pages

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Si4776DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.016 at VGS = 10 V
30
0.020 at VGS = 4.5 V
ID (A)a
11.9
10.6
Qg (Typ.)
5.5 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information:
Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFETMonolithic TrenchFETPower
MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power and Memory
- Low Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W.
Symbol
RthJA
RthJF
Typ.
40
24
Limit
30
± 20
11.9
9.5
9.3b, c
7.5b, c
50
3.7
2.3b, c
10
5
4.1
2.6
2.5b, c
1.6b, c
- 55 to 150
Max.
50
30
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 63316
www.vishay.com
S11-1658-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Si4776DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On -State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
Forward Transconductancea
gfs VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 1 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1
30
0.2
Typ.
0.013
1
0.013
0.016
30
521
141
57
11.6
5.5
1.5
1.9
0.8
12
12
14
8
10
11
11
6
0.44
12
4.5
6.5
5.5
Max.
2.3
± 100
0.150
10
0.016
0.020
17.5
8.5
1.6
24
24
28
16
20
22
22
12
3.7
50
0.55
24
9
Unit
V
nA
mA
A
S
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 63316
2 S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
10
8
Si4776DY
Vishay Siliconix
30
20
10
0
0.0
0.020
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
6
TC = 25 °C
4
2
TC = 125 °C
TC = - 55 °C
0
0.0 1.0 2.0 3.0 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
700
5.0
0.018
0.016
VGS = 4.5 V
560 Ciss
420
0.014
0.012
VGS = 10 V
280
Coss
140 Crss
0.010
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
10
ID = 10 A
8
6
VDS = 15 V
VDS = 10 V
4
VDS = 20 V
2
0
0 2 4 6 8 10 12
Qg - Total Gate Charge (nC)
Gate Charge
0
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
1.4
1.2
VGS = 10 V
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
Document Number: 63316
www.vishay.com
S11-1658-Rev. A, 15-Aug-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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New Product
Si4776DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
TJ = 150 °C
1 TJ = 25 °C
0.1
0.01
0.050
ID = 10 A
0.040
0.030
0.020
0.010
TJ = 125 °C
TJ = 25 °C
0.001
0.0 0.2 0.4 0.6 0.8
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.0
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
10-1
10-2
10-3
10-4
10-5
10-6
10-7
0
150
30 V
120
20 V
10 V
90
60
30
25 50 75 100 125
TJ - Temperature (°C)
Reverse Current (Schottky)
150
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
100 μs
1 ms
1
Limited by RDS(on)*
10 ms
100 ms
0.1
1s
TC = 25 °C
Single Pulse
0.01
0.01
0.1
10 s
BVDSS Limited
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
Document Number: 63316
4 S11-1658-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




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