SI4774DY Datasheet PDF - Vishay Siliconix


www.Datasheet-PDF.com

SI4774DY
Vishay Siliconix

Part Number SI4774DY
Description N-Channel 30 V (D-S) MOSFET
Page 10 Pages

SI4774DY datasheet pdf
View PDF for PC
SI4774DY pdf
View PDF for Mobile


No Preview Available !

www.DataSheet.co.kr
New Product
Si4774DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0095 at VGS = 10 V
30
0.0120 at VGS = 4.5 V
SO-8
ID (A)a
16
15
Qg (Typ.)
9.5 nC
S1
S2
S3
G4
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET Gen. 
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
Top View
Ordering Information:
Si4774DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
16
13.6
12b, c
9.6b, c
50
4.5
2.3b, c
15
11.25
5
3.2
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-
to-Ambientb, d
Maximum Junction-
to-Foot (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJF
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Typ.
38
20
Max.
50
25
Unit
°C/W
Document Number: 67953
www.vishay.com
S11-1179-Rev. A, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
Si4774DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On -State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
Forward Transconductancea
gfs VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 2 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1
30
0.3
Typ.
Max.
Unit
0.028
2.5
2.3
± 100
0.200
20
0.0079
0.0096
43
0.0095
0.0120
V
nA
mA
A
S
1025
251
100
20.3
9.5
2.8
3.2
1.0
11
22
13
11
8
13
14
9
0.44
18
7.5
10
8
30.5
14.3
2.0
22
48
26
22
16
26
28
18
4.5
50
0.55
35
15
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67953
2 S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
10
8
Si4774DY
Vishay Siliconix
30
20
10
0
0
0.011
VGS = 3 V
VGS = 2 V
0.5 1 1.5 2 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
1500
0.010
0.009
VGS = 4.5 V
1200
900
Ciss
0.008
0.007
VGS = 10 V
600
Crss
300
Coss
0.006
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 10 A
8
6
VDS = 15 V
4 VDS = 10 V
VDS = 20 V
2
0
0 3.4 6.8 10.2 13.6 17.0
Qg - Total Gate Charge (nC)
Gate Charge
1.8
ID = 10 A
1.6
VGS = 10 V
1.4
1.2 VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67953
www.vishay.com
S11-1179-Rev. A, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

www.DataSheet.co.kr
New Product
Si4774DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.040
10 TJ = 150 °C
1
TJ = 25 °C
0.032
0.024
ID = 10 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.016
TJ = 125 °C
0.008
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10-1
10-2
10-3
10-4
10-5
10-6
10-7
0
30 V
20 V
80
64
48
10 V
32
16
25 50 75 100 125
TJ - Temperature (°C)
Reverse Current (Schottky)
150
0
0.001
0.01 0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
100 μs
10
ID Limited
1 ms
1 10 ms
Limited by RDS(on)*
100 ms
1s
0.1 10 s
TC = 25 °C
Single Pulse
BVDSS Limited
DC
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
www.vishay.com
Document Number: 67953
4 S11-1179-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/




SI4774DY datasheet pdf
Download PDF
SI4774DY pdf
View PDF for Mobile


Similiar Datasheets : SI4774DY

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact