SI4752DY Datasheet PDF - Vishay Siliconix


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SI4752DY
Vishay Siliconix

Part Number SI4752DY
Description N-Channel 30 V (D-S) MOSFET
Page 10 Pages

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Si4752DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0055 at VGS = 10 V
0.0076 at VGS = 4.5 V
ID (A)a
25
21
Qg (Typ.)
13.8 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFETMonolithic TrenchFETPower
MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power
• VRM, POL, Server
• Synchronous Rectifier Switch
D
Schottky Diode
G
Top View
Ordering Information: Si4752DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
ID
IDM
IS
IAS
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
S
N-Channel MOSFET
Limit
30
± 20
25
20
17.4b, c
13.8b, c
80
5.6
2.7b, c
20
20
6.25
4.0
3.0b, c
1.9b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
33
16
Max.
42
20
Unit
°C/W
Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On -State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 7 A
Forward Transconductancea
Dynamicb
gfs VDS = 15 V, ID = 10 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.0
20
0.3
Typ.
Max.
0.018
2.0
2.2
± 100
0.15
20
0.0045
0.0063
45
0.0055
0.0076
1700
410
130
28.5
13.8
4.2
3.8
1.4
18
15
25
8
11
12
25
8
43
21
2.8
35
30
50
16
22
24
50
16
0.46
23
12
11
12
5.6
80
0.65
45
24
Unit
V
nA
mA
A
S
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 1.2
VGS = 10 V thru 4 V
64
48
VGS = 3 V
32
16
0
0.0
0.009
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
1.0
0.8
0.6
0.4
TC = 25 °C
0.2
TC = 125 °C
0.0 TC = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2200
0.008
0.007
VGS = 4.5 V
1760
1320
Ciss
0.006
0.005
VGS = 10 V
0.004
0
16 32 48 64
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2
80
0
0 6 12 18 24 30
Qg - Total Gate Charge (nC)
Gate Charge
880
Coss
440
Crss
0
05
10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
1.4
VGS = 10 V
20
1.2 VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
www.vishay.com
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New Product
Si4752DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
TJ = 150 °C
10
0.04
TJ = 25 °C
1
0.03
ID = 10 A
0.1 0.02
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10-1
0.01
TJ = 125 °C
0 TJ = 25 °C
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
170
10-2
10-3
10-4
10-5
10-6
10-7
0
30 V
20 V
10 V
25 50 75 100 125
TJ - Junction Temperature (°C)
Reverse Current (Schottky)
150
100
Limited by RDS(on)*
136
102
68
34
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
10 ms
1
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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Document Number: 66819
S10-2008-Rev. A, 06-Sep-10
Datasheet pdf - http://www.DataSheet4U.net/




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