SFT5926-63 Datasheet PDF - SSDI


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SFT5926-63
SSDI

Part Number SFT5926-63
Description SILICON NPN POWER TRANSISTOR
Page 2 Pages

SFT5926-63 datasheet pdf
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT5926
__ __
│ └ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/63 = TO-63
SFT5926/63
150V, 100 AMP
POWER TRANSISTOR
SILICON NPN
350 WATTS
Features:
High Frequency transistor with BVCEO to 120 Volts
Enhanced SOA capability and Fast Switching
High Power Dissipation: 350 Watts
200°C Operating Temperature
Replacement for 2N5926
TX, TXV, S-Level Screening Available2/ - Consult
Factory
Maximum Ratings
Symbol
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
VCEO
VCBO
VEBO
IC
IB
PD
Top & Tstg
RθJC
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For ordering information, price, operating curves, and availability contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25ºC.
TO-63
Value
120
150
10
100
20
350
2
-65 to +200
0.5
Units
Volts
Volts
Volts
Amps
Amps
W
W/ºC
ºC
ºC/W
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0115A
DOC



No Preview Available !

Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SFT5926/63
Electrical Characteristic 3/
Symbol
Collector – Emitter Breakdown Voltage*
IC = 200mA
Collector – Cutoff Current
VCE = 150V
VCE = 100V, TC = 150°C
Emitter – Cutoff Current
VEB = 10V
DC Current Gain *
Collector – Emitter Saturation Voltage *
Base – Emitter Voltage *
VCE = 2V, IC = 20A
VCE = 2V, IC = 50A
VCE = 4V, IC = 90A
VCE = 2V, IC = 50A, TA = -65°C
IC = 50A, IB = 5A
IC = 90A, IB = 18A
IC = 50A, VCE = 2V
IC = 90A, VCE = 4V
Common Emitter Small Signal Gain
VCE = 10V, IC = 5A, f= 100kHz
Safe Operating Area
VCE = 4V, IC = 50A,1s, TC = 25°C
VCE = 50V, IC = 1A,1s, TC = 25°C
VCE = 100V, IC = 0.5A,1s, TC= 25°C
ON Time
Storage Time
Fall Time
VCC = 50V, VBE1 = 11.2V
RC = 1, VBE2 = 10V
RB = 2
BVCEO
ICES
IEBO
hFE
VCE(Sat)
VBE(on)
hfe
SOA1
SOA2
SOA3
tON
tS
tf
Min
120
-
-
-
20
10
5
10
-
-
-
-
5
-
-
-
-
-
-
-
Max Units
- Volts
2
10
mA
1 mA
120
100
-
––
-
0.6
1.5
Volts
1.5
2.5
Volts
20 ––
-
- ––
-
7 µsec
4
6
µsec
NOTES:
1. DIMENSION DOES NOT INCLUDE
SEALING FLANGES.
2. PACKAGE CONTOUR OPTIONAL
WITHIN DIMENSIONS SPECIFIED.
3. POSITION OF LEADS IN RELATION
TO HEXAGON IS NOT DEFINED.
PIN ASSIGNMENT
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
TO-63
SITTING PLANE
1
.167
.090
5/16-24 UNF-2A
2
.300 MAX
Ø..321739
3x Ø..100650
3
.260
.240
2
Ø..877755
1
2
3
.515
.485
.105 MAX
.495
.460
.515
.380
1.030
.937
.885
.855
Ø..777455
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0115A
DOC




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