SDR952M Datasheet PDF - SSDI

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SDR952M
SSDI

Part Number SDR952M
Description (SDR950M - SDR952M) Hyper Fast Rectifier
Page 2 Pages


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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR950 __ __ __
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
+ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
¦ + Leg Bend Option
¦ (See Figure 1)
+
Package M = TO-254, Z = TO-254Z
SDR950M & Z
Thru
SDR952M & Z
50A, 35nsec typ., 100-200 V
Hyper Fast Rectifier
Features:
Hyper Fast Recovery: 50nsec Maximum 3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Higher Voltages and Faster Recovery Times
Available, Contact Factory
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Peak Repetitive Reverse Voltage
SDR950M & Z
SDR951M & Z
SDR952M & Z
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 5/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, or equivalent DC) 4/
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case 4/
Symbol
VRRM
VRWM
VR
Io
IFSM
TOP & TSTG
Rθ JC
Value
100
150
200
50
350
-65 to +200
0.85
Units
Volts
Amps
Amps
ºC
ºC/W
- Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF =10 Amp, di/dt = 200A/µs
4/ Pins 2 and 3 Tied Together.
5/ TC = 150°C, Derate to 0A @ 200°C.
- TO-254 (M)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
- TO-254Z (Z)
DATA SHEET #: RH0039K
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Instantaneous Forward Voltage Drop
(IF = 25A, 300-500µsec Pulse)
(IF = 50A, 300-500µsec Pulse)
Instantaneous Forward Voltage Drop
(IF = 50Adc, 300-500µsec Pulse)
Reverse Leakage Current
(300µsec Pulse Minimum)
Reverse Recovery Time
(IF =10 Amp, di/dt = 200A/µs)
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
SDR950M & Z
Thru
SDR952M & Z
Symbol
TA = 25 ºC
TA = 25 ºC
TA = -55 ºC
VF1
VF2
VF3
TA = 25 ºC, Rated VR
TC = 100 ºC, 80% of Rated VR
IR1
IR2
tRR
CJ
Max
1.00
1.25
1.35
100
10
50
900
Units
VDC
VDC
µA
mΑ
nsec
pF
Figure 1- Optional Lead Bends
Code
PIN ASSIGNMENT
FUNCTION
Pin 1
Cathode
Pin 2
Anode
Pin 3
Anode
Suffix MD & ZD
Suffix MU & ZU
TO-254 (Suffix M) Outline:
TO-254Z (Suffix Z) Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Measured in Inches
DATA SHEET #: RH0039K
DOC



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