SC75823A Datasheet PDF - Silan Microelectronics

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SC75823A
Silan Microelectronics

Part Number SC75823A
Description 1/3 DUTY GENERAL-PURPOSE LCD DRIVER
Page 16 Pages


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Silan
Semiconductors
SC75823
1/3 DUTY GENERAL-PURPOSE LCD
DRIVER
DESCRIPTION
The SC75823 is a general-purpose LCD driver that can be used
for frequency display in microprocessor-controlled radio receives
and in other display applications. In addition to being able to directly
drive up to 156 LCD segments.
QFP-64-14x14-0.8
FEATURES
Supports both 1/3 duty 1/2 bias and 1/3 duty 1/3 bias LCD
drive of up to 156 segments under serial data control.
Serial data input supports CCB format communication with the
system controller.
LQFP-64-10 x 10-0.5
Serial data control of the power-saving mode based backup
function and all the segments forced off function.
High generality since display data is displayed directly without ORDERING INFORMATION
decoder intervention.
Device
Package
The INH pin can force the display to the off state.
SC75823A LQFP-64-10 X 10-0.5
The LCD drive bias voltage can be provided internally or SC75823B QFP-64-14 X 14-0.8
externally.
Power supply voltage: 4.5 to 6.0V
BLOCK DIAGRAM
COM1 COM2 COM3
S52 S51
VDD1
VDD2
INH
Common Driver
OSC
Clock
Generator
Latch & Driver
Shift Register
Address
Detector
S1
DI CL CE
VDD VSS
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
1



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Semiconductors
PIN CONFIGURATION
SC75823
48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
S49 49
32 S32
S50 50
31 S31
S51 51
30 S30
S52 52
29 S29
COM1 53
28 S28
COM2 54
27 S27
COM3 55
26 S26
VDD 56
INH 57
SC75823
25 S25
24 S24
VDD1 58
23 S23
VDD2 59
22 S22
VSS 60
21 S21
OSC 61
20 S20
CE 62
19 S19
CL 63
18 S18
DI 64
17 S17
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C, VSS=0 V)
Characteristics
Symbol
Maximum Supply Voltage
VDDmax
Input Voltage
VIN1
VIN2
Output Voltage
VOUT
Output Current
IOUT1
IOUT2
Allowable Power Dissipation
PDmax
Operating Temperature
Topr
Storage Temperature
Tstg
Value
-0.3 to +6.5
-0.3 to +6.5
-0.3 to VDD+0.3
-0.3 to VDD+0.3
300
3
200
-40 to +85
-55 to 125
Unit
V
V
V
V
µA
mA
mW
°C
°C
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
2



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Semiconductors
SC75823
ALLOWABLE OPERATING RANGE (Tamb=-40 to +85°C, VSS=0V)
Characteristics
Supply Voltage
Input Voltage
Symbol Test Condition
VDD VDD
VDD1 VDD1
VDD2 VDD2
Min.
4.5
Input High level Voltage
VIH CE, CL, DI, INH
4.0
Input Low Level Voltage
VIL CE, CL, DI, INH
0
Recommended External Resistance
Recommended External Capacitance
Guaranteed Oscillator Range
Data Setup Time
Data Hold Time
CE Wait Time
CE Setup Time
CE Hold Time
High-level Clock Pulse Width
Low-level Clock Pulse Width
Rise Time
Fall Time
ROSC
COSC
fOSC
tds
tdh
tcp
tcs
tch
tφH
tφL
tr
tf
OSC
OSC
OSC
CL, DI: figure 2
CL, DI: figure 2
CE, CL: figure 2
CE, CL: figure 2
CE, CL: figure 2
CL: figure 2
CL: figure 2
CE, CL, DI: figure 2
CE, CL, DI: figure 2
19
100
100
100
100
100
100
100
INH Switching Time
t2 INH , CE: figure 3
10
Typ.
2/3VDD
1/3VDD
47
1000
38
Max.
6.0
6.0
6.0
6.0
0.7
76
100
100
Unit
V
V
V
V
V
k
pF
kHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Test Condition
Min.
Typ.
Input High Level Current
IIH CE, CL, DI, INH ; VI=6V
Input Low Level Current
Oscillator Frequency
IIL
fOSC
CE, CL, DI, INH ; VI=0V
OSC;ROSC=47k,
COSC=1000pF
-5
38
Hysteresis Width
Output High Level Voltage
Output Low Level Voltage
Output High Level Voltage
Output Low Level Voltage
Intermediate Level Voltage
VH
VOH1
VOL1
VOH2
VOL2
VMID1
VMID2
CE, CL, DI, INH ; VDD=5V
0.3
S1 to S52; IO=-20µA
VDD-1.0
S1 to S52; IO=20µA
COM1 to COM3; IO=-100µA VDD-1.0
COM1 to COM3; IO=100µA
1/2 bias, COM1 to COM3;
1/2VDD±1.0
IO=±100µA
1/3 bias, COM1 to COM3;
2/3VDD±1.0
IO=±100µA
Max.
5
1.0
1.0
Unit
µA
µA
kHz
V
V
V
V
V
V
V
(To be continued)
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
3



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Semiconductors
SC75823
(Continued)
Characteristics
Intermediate Level Voltage*
Supply Current
Symbol
Test Condition
Min.
1/3 bias, COM1 to COM3;
VMID3
1/3VDD±1.0
IO=±100µA
1/3 bias, S1 to S52;
VMID4
2/3VDD±1.0
IO=±20µA
1/3 bias, S1 to S52;
VMID5
1/3VDD±1.0
IO=±20µA
IDD1 Power saving mode
IDD2 f=38kHz, 1/2 bias, VDD=5V
IDD3 f=38kHz, 1/3 bias, VDD=5V
IDD2 f=38kHz, 1/2 bias, VDD=6V
IDD3 f=38kHz, 1/3 bias, VDD=8V
Typ.
400
300
650
580
Max.
5
800
600
1300
1200
Unit
V
V
V
µA
µA
µA
µA
µA
Note: * Except the bias voltage generation divider resistors that are built into VDD1 and VDD2.(see figure 1)
Figure 1
VDD
VDD1
VDD2
To the common segment driver
Except these resistors
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.1 2002.03.04
4



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