S1A0134A01 Datasheet PDF - Samsung semiconductor


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S1A0134A01
Samsung semiconductor

Part Number S1A0134A01
Description DUAL PRE-POWER AMP
Page 6 Pages

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DUAL PRE-POWER AMP
INTRODUCTION
The S1A0134A01 is a monolithic integrated circuit designed for
use in low voltage and low power applications. It has various
functions including those of a dual audio pre-power amplifier,
DC volumecontrol and headphone drive circuits.
It is suitable for portable tape recorders or headphone cassette
recorders.
16DIP300A
FEATURES
• Built-in DC volume control circuit
• Wide operation supply voltage: VCC = 1.8V — 6V
• Only a few components needed to build headphone cassette tape recorders
• Built-in ripple filter
ORDERING INFORMATION
Device
S1A0134A01-D0B0
Package
16DIP300A
Operating Temperature
20°C — +75°C
BLOCK DIAGRAM
S1A0134A01
PRE
PRE POWER
POWER
VREF INPUT2 NF2 OUT2 INPUT2 CONT OUT2 VCC
16 15 14 13 12 11 10
9
VREF
-
+
PRE AMP2
PRE AMP1
+
-
1
PRE
GND
2
PRE
INPUT1
3
NF1
VOLUME
CONTROL
POWER AMP2
POWER AMP1
RIPPLE
FILTER
4
PRE
OUT1
5
POWER
INPUT1
6
RIPPLE
FILTER
7
POWER
OUT1
8
POWER
GND
1



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S1A0134A01
DUAL PRE-POWER AMP
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Supply Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
VCC
PD
TOPR
TSTG
Value
7
750
20 — +75
40 — +125
Unit
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS
(VCC = 3V, Ta = 25°C, f = 1kHz, RL1 = 10k, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Quiescent Circuit Current
ICCQ1
ICCQ2
VI = 0, VOL = MIN
VI = 0, VOL = MAX
Cross Talk
CT RG = 2.2k, VO = 10dBm
Min.
34
Typ.
9
11
40
Max.
13
Unit
mA
mA
dB
PRE-AMPLIFIER SECTION
(VCC = 3V, Ta = 25°C, f =1kHz, RL1 =10k, unless otherwise specified)
Characteristic
Symbol
Test conditions
Open Loop Voltage Gain
GVO
VI = 0.2mV
Closed Loop Voltage Gain
GVC1 VO = 10dBm, NAB 1kHz
Output Voltage
Total Harmonic Distortion
VO
THD1
THD = 1%
VO = 10dBm
Ripple Rejection Ratio
RR1
RG = 2.2k
VR = 20dBm, fR = 100Hz
Equivalent Input
Noise Voltage
VNI
RG = 2.2k, BW = 30 20kHz
Gain for NAB 1kHz
Min.
55
600
Typ.
62
33
720
0.04
Max.
0.1
Unit
dB
dB
mV
%
46 dB
1.2 2.0 µV
2



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DUAL PRE-POWER AMP
S1A0134A01
POWER AMPLIFIER SECTION
(VCC = 3V, Ta = 25°C, f = 1kHz, RL2 = 32, unless otherwise specified)
Characteristic
Symbol
Test conditions
Output Power
Total Harmonic Distortion
Closed Loop Voltage Gain
Channel Balance
PO1
PO2
THD2
THD3
GVC2
GVC3
CB
THD2 = 10%
THD2 = 10%, RL = 16
PO = 10mW, Volume: 100%
PO = 10mW, Volume: 50%
VO = 0dBm, Volume: 100%
VO = 10dBm, Volume: 50%
VO = 10dBm
Volume Rejection Ratio
VOLREJ
VO = 10dBm
Volume: 100% to 0%
Output Noise Voltage
VNO
BW = 30 20kHz,
RG = 600
Ripple Rejection Ratio
RR2
RG = 600, fr = 100Hz
Vr = 20dBm
Min.
20
28
1.5
66
Typ.
27
39
0.5
0.3
30
15
0
72
250
46
Max.
1.2
32
1.5
320
Unit
mW
mW
%
%
dB
dB
dB
dB
µV
dB
3



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S1A0134A01
TEST CIRCUIT
PRE OUT 2
DUAL PRE-POWER AMP
POWER IN 2
PRE IN 2
2.2k
2.2k
PRE IN 1
POWER IN 1
240
4.7µ F
0.018 µ F
10k RL1
A 36k
B
C
16k
100 µ F
VCC
22 µ F 6.8k
82k
4.7µ F
16 15 14 13 12 11 10
220 µ F
POWER OUT2
9 RL2
S1A0134A01
1234567
82k
22 µ F 6.8k
240
0.018 µ F
4.7µ F
4.7µ F 100 µ F
10k
RL1
PRE OUT 1
8
220 µ F
RL2
POWER OUT1
4




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