S0500YC25Y Datasheet PDF - IXYS


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S0500YC25Y
IXYS

Part Number S0500YC25Y
Description Symmetrical Gate Turn-Off Thyristor
Page 16 Pages

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Date:- 10 May, 2013
Data Sheet Issue:- 1
Symmetrical Gate Turn-Off Thyristor
Type S0500YC20Y and S0500YC25Y
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2000-2500
2000-2600
100
100
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6)
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDRM, VDM<VDRM, diGQ/dt=20A/µs, CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
500
0.3
275
545
4.0
7.2
80
1000
160
5
100
18
90
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Types S0500YC20Y & S0500YC25Y Issue 1
Page 1 of 15
May, 2013



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Characteristics
Symmetrical Gate Turn-Off Thyristor types S0500YC20Y & S0500YC25Y
Parameter
VTM Maximum peak on-state voltage
IL Latching current
IH Holding current
dv/dtcr Critical rate of rise of off-state voltage
IDM Peak off state current
IRM Peak reverse current
IGKM Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
Igq Turn-off gate current
Qgq Turn-off gate charge
ttail Tail time
tgw Gate off-time (see note 3)
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN TYP MAX TEST CONDITIONS
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
2
5
5
-
-
-
-
0.9
0.8
0.7
1.5
0.5
0.1
1.5
3.5
0.8
10
185
1200
50
-
-
2.5 IG=2A, IT=500A
- Tj=25°C
- Tj=25°C
- VD=80%VDRM, VGR=-2V
30 Rated VDRM, VGR=-2V
60 Rated VRRM
200 VGR=-16V
- Tj=-40°C
- Tj=25°C
VD=25V, RL=25m
- Tj=125°C
6 Tj=-40°C
2 Tj=25°C
VD=25V, RL=25m
0.4 Tj=125°C
VD=50%VDRM, ITGQ=500A, IGM=10A, diG/dt=5A/µs
-
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)
5 Conditions as for td, (10%IGM to 10%VD)
VD=80%VDRM, ITGQ=500A, CS=1µF,
-
diGQ/dt=20A/µs, VGR=-16V, (90%ITGQ to 10%IVD)
11 Conditions as for tf, (10%IGQ to 10%ITGQ)
- Conditions as for tf
1330 Conditions as for tf
75 Conditions as for tf, (10%ITGQ to ITGQ<1A)
- Conditions as for tf,
0.087 Double side cooled
- - 0.235 Cathode side cooled
- - 0.138 Anode side cooled
4.5 - 9.0 (see note 2)
- 85 -
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Data Sheet. Types S0500YC20Y & S0500YC25Y Issue 1
Page 2 of 15
May, 2013



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Symmetrical Gate Turn-Off Thyristor types S0500YC20Y & S0500YC25Y
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition. While not
given in the ratings, VDC should ideally be limited to 60% VDRM in this product.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 100 Volts. If specified at the time of order, a VRRM up to
80%VDRM is available.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves of figures
15 & 16. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
Ls
Ds R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 3.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced.
Alternatively Vs should be limited to 700 Volts to avoid possible device failure.
Data Sheet. Types S0500YC20Y & S0500YC25Y Issue 1
Page 3 of 15
May, 2013



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Symmetrical Gate Turn-Off Thyristor types S0500YC20Y & S0500YC25Y
1.7 Critical rate of rise of on-state current
The value given is the maximum repetitive rating, but does not imply any specific operating condition. The
high turn-on losses associated with limit di/dt would not allow for practical duty cycle at this maximum
condition. For special pulse applications, such as crowbars and pulse power supplies, a much higher di/dt
is possible. Where the device is required to operate with infrequent high current pulses, with natural
commutation (i.e. not gate turn-off), then di/dt>3kA/µs is possible. For this type of operation individual
specific evaluation is required.
1.8 Gate ratings
The absolute conditions above which the gate may be damaged. It is permitted to allow VGK(AV) during
turn-off (see diagram 10) to exceed VRGM which is the implied DC condition.
1.9 Minimum permissible off time.
This time relates specifically to re-firing of device (see also note on gate-off time 2.7). The value given in
the ratings applies only to operating conditions of ratings note 2. For other operating conditions see the
curves of figure 18.
1.10 Minimum permissible on-time.
Figure is given for minimum time to allow complete conduction of all the GTO thyristor islands. Where a
simple snubber, of the form given in diagram 1. (or any other non-energy recovery type which discharges
through the GTO at turn-on) the actual minimum on-time will usually be fixed by the snubber circuit time
constant, which must be allowed to fully discharge before the GTO thyristor is turned off. If the anode
circuit has di/dt<10A/µs then the minimum on-time should be increased, the actual value will depend
upon the di/dt and operating conditions (each case needs to be assessed on an individual basis).
Data Sheet. Types S0500YC20Y & S0500YC25Y Issue 1
Page 4 of 15
May, 2013




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