RT9595 Datasheet PDF - Richtek Technology

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RT9595
Richtek Technology

Part Number RT9595
Description MOSFET Integrated Smart Photoflash Capacitor Charger
Page 9 Pages


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®
RT9595
MOSFET Integrated Smart Photoflash Capacitor Charger
with IGBT Driver
General Description
The RT9595 is a complete photoflash module solution for
digital and film cameras. It is targeted for applications that
use 2 to 3 AA batteries or 1 Lithium-Ion battery. The RT9595
adopts fly back topology which use constant primary peak
current and zero secondary valley current to charge
photoflash capacitor quickly and efficiently. The built-in
45V MOSFET allows flexibility in transformer design and
simplifies the PCB layout. The RT9595 also integrate an
IGBT driver for igniting photoflash tube. Only a few external
components are required, which greatly reduce the PCB
space and cost. The RT9595 is available in the
WDFN-10L 3x3 package.
Ordering Information
RT9595
Package Type
QW : WDFN-10L 3x3 (W-Type)
Note :
Lead Plating System
G : Green (Halogen Free and Pb Free)
Richtek products are :
` RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
` Suitable for use in SnPb or Pb-free soldering processes.
Features
z 45V MOSFET Integrated
z Charges any Size Photoflash Capacitor
z Adjustable Input Current
z Adjustable Output Voltage
z Charge Complete Indicator
z Built-In IGBT Driver for IGBT Application
z Constant Peak Current Control
z Over Voltage Protection
z 10-Lead WDFN Package
z RoHS Compliant and Halogen Free
Applications
z Digital Still Camera
z Film Camera Flash Unit
z Camera Phone Flash
Pin Configurations
(TOP VIEW)
GND 1
DRVOUT 2
VDD 3
DRVIN 4
CHARGE 5
10 SW
9 NC
8 CS
7 FB
11 6 STAT
WDFN-10L 3x3
Marking Information
FC= : Product Code
FC=YM
DNN
YMDNN : Date Code
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
DS9595-04 March 2012
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
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RT9595
Typical Application Circuit
VBAT
1:N
C2
47µF
10 7
GSD2004S
VOUT
R1
150k
R2
150k
COUT
100µF/
330V
R3
1k
3.3V/5V
C1
1µF
R5
54k
R4
100k
3 VDD
4 Strobe
DRVIN
RT9595
6 STAT
5
CHARGE
8 CS
DRVOUT 2
IGBT
Gate
1, Exposed Pad (11)
GND
RCS
54k
GPIO
(Floating/GND)
Function Block Diagram
VDD
DRVOUT
DRVIN
Maximum
Off
DCM
CHARGE
FB
STAT
1V
+
-
Enable
0.8V
+
-
SW
Sense
SQ
R
IPEAK
SW
SW OVP
FB
CS
SW
GND
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
www.richtek.com
2
is a registered trademark of Richtek Technology Corporation.
DS9595-04 March 2012



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RT9595
Functional Pin Description
Pin No.
1,
11 (Exposed Pad)
2
Pin Name
GND
DRVOUT
Pin Function
Ground. The exposed pad must be soldered to a large PCB and connected to
GND for maximum power dissipation.
IGBT Driver Output Pin.
3
VDD
Power Input Pin.
4
DRVIN
IGBT Driver Input Pin.
Charge Enable Pin. The charge function is executed when CHARGE pin is
5 CHARGE set from Low to High. The chip is in Shutdown mode when CHARGE pin is
set to Low.
6
STAT
Charge Status Output. Open Drain output. When target output voltage is
reached, N-MOSFET turns on. This pin needs a pull up resistor.
7 FB
Feedback Voltage Pin.
8 CS
Input Current Setting Pin.
9 NC No Internal Connection.
10 SW N-MOSFET Switching Node.
Absolute Maximum Ratings (Note 1)
z Supply Voltage, VDD ------------------------------------------------------------------------------------------------------ 6V
z Built-in N-Channel Enhancement MOSFET
Drain-Source Voltage ----------------------------------------------------------------------------------------------------- 45V
CS, CHARGE, DRVIN, DRVOUT, STAT, FB ------------------------------------------------------------------------- 6V
SW Pulse Current (Pulse Width 1μs) ----------------------------------------------------------------------------- 4A
SW Continuous Current ------------------------------------------------------------------------------------------------- 2A
z Power Dissipation, PD @ TA = 25°C
WDFN-10L 3x3 ------------------------------------------------------------------------------------------------------------- 1.667W
z Package Thermal Resistance (Note 2)
WDFN-10L 3x3, θJA ------------------------------------------------------------------------------------------------------- 60°C/W
WDFN-10L 3x3, θJC ------------------------------------------------------------------------------------------------------- 7.5°C/W
z Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C
z Lead Temperature (Soldering, 10 sec.) ------------------------------------------------------------------------------- 260°C
z Storage Temperature Range -------------------------------------------------------------------------------------------- 65°C to 150°C
z ESD Susceptibility (Note 3)
HBM (Human Body Mode) ---------------------------------------------------------------------------------------------- 2kV
MM (Machine Mode) ------------------------------------------------------------------------------------------------------ 200V
Recommended Operating Conditions (Note 4)
z Drain Source Voltage ----------------------------------------------------------------------------------------------------- 40V
z Junction Temperature Range -------------------------------------------------------------------------------------------- 40°C to 125°C
z Ambient Temperature Range -------------------------------------------------------------------------------------------- 40°C to 85°C
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
DS9595-04 March 2012
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
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RT9595
Electrical Characteristics
(VDD = 3.3V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
VDD Operating Voltage
VDD
Switch Off Current
IVDD_SW_OFF
Shutdown Current
IOFF
FB Voltage
VFB
Line Regulation
| ΔVFB |
STAT Open Drain RDS(ON)
Charge Enable High
VCEH
Charge Enable Low
VCEL
Built-In N-Channel Enhancement MOSFET
Drain-Source On-Resistance
Maximum Off Time During
Pre-Charge
Minimum Off Time
RDS(ON)
IGBT Driver
DRVIN Trip Point
DRVOUT On Resistance to VDD
DRVOUT On Resistance to GND
Propagation Delay (Rising)
Propagation Delay (Falling)
Test Conditions
VFB = 1.1V
CHARGE pin = 0V
2.9V < VDD < 5.5V
VDD = 3.3V, ID = 10mA
VDD = 3.3V
VDD = 3.3V
Min
2.9
--
--
0.985
--
--
1.3
--
Typ
--
1
0.01
1
--
11
--
--
Max
5.5
10
1
1.015
10
19
--
0.4
Unit
V
μA
μA
V
mV
Ω
V
V
-- 0.3 0.4
-- 9 --
-- 400
--
Ω
μs
ns
0.8 1.5
-- 6
-- 11
-- 20
-- 200
2.4
--
--
--
--
V
Ω
Ω
ns
ns
Note 1. Stresses beyond those listed Absolute Maximum Ratingsmay cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright ©2012 Richtek Technology Corporation. All rights reserved.
www.richtek.com
4
is a registered trademark of Richtek Technology Corporation.
DS9595-04 March 2012



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