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Part Number

RJK03R4DPA

Manufacturer Renesas Technology
Short Description Built in SBD Dual N-channel Power MOS FET
Long Description Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-chan

Datasheet : RJK03R4DPA



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