RJK03B8DPA Datasheet PDF - Renesas Technology


www.Datasheet-PDF.com

RJK03B8DPA
Renesas Technology

Part Number RJK03B8DPA
Description Silicon N Channel Power MOS FET Power Switching
Page 7 Pages

RJK03B8DPA datasheet pdf
View PDF for PC
RJK03B8DPA pdf
View PDF for Mobile


No Preview Available !

RJK03B8DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 7.2 mtyp. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
RENESAS Package code: PWSN0008DC-A
(Package name: WPAK(2))
5 678
Preliminary Datasheet
REJ03G1790-0210
Rev.2.10
May 12, 2010
5 678
D DDD
4 32 1
4
G
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25C, Rg 50
3. Tc = 25C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-c Note3
Tch
Tstg
Ratings
30
±20
30
120
30
9
8.1
28
4.46
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
REJ03G1790-0210 Rev.2.10
www.DaMtaaSyhe1e2t,4U20.n1e0t
Page 1 of 6



No Preview Available !

RJK03B8DPA
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.2
Typ
7.2
9.3
75
1330
185
95
1.2
9
3.8
2.2
9
4.3
35
4.9
0.87
14
Max
± 0.1
1
2.5
9.3
12.9
1.14
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VGS = 10 V Note4
ID = 15 A, VGS = 4.5 V Note4
ID = 15 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 4.5 V
ID = 30 A
VGS = 10 V, ID = 15 A
VDD 10 V
RL = 0.67
Rg = 4.7
IF = 30 A, VGS = 0 Note4
IF =30 A, VGS = 0
diF/ dt = 100 A/ s
REJ03G1790-0210 Rev.2.10
May 12, 2010
Page 2 of 6



No Preview Available !

RJK03B8DPA
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
4.5 V
10 V
16
3.0 V
Pulse Test
2.8 V
12
8
VGS = 2.6 V
4
0
24
6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
400
Pulse Test
300
200
ID = 20 A
100
10 A
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
REJ03G1790-0210 Rev.2.10
May 12, 2010
Preliminary
Maximum Safe Operation Area
1000
100 1 ms 10 μs
10
PW = 10 ms
Operation in
1 this area is
limited by RDS(on)
Tc = 25 °C
0.1 1 shot Pulse
0.1 1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
20
VDS = 10 V
Pulse Test
16
12
8
4 Tc = 75°C
25°C
–25°C
0
12
34
5
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Page 3 of 6



No Preview Available !

RJK03B8DPA
Static Drain to Source On State Resistance
vs. Temperature
25
Pulse Test
20
15 ID = 5 A, 10 A, 20 A
10 VGS = 4.5 V
5 10 V
5 A, 10 A, 20 A
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Dynamic Input Characteristics
50
ID = 30 A
40
30 VDS
VDD = 25 V
10 V
VGS
20
16
12
20 8
10
VDD = 25 V
4
10 V
00
0 8 16 24 32 40
Gate Charge Qg (nc)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
IAP = 9 A
VDD = 15 V
16 duty < 0.1%
Rg 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Preliminary
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
Ciss
300
100
30 VGS = 0
f = 1 MHz
10
0 10
Coss
Crss
20 30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
5V
Pulse Test
30
20
10 VGS = 0, –5 V
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
REJ03G1790-0210 Rev.2.10
May 12, 2010
Page 4 of 6




RJK03B8DPA datasheet pdf
Download PDF
RJK03B8DPA pdf
View PDF for Mobile


Similiar Datasheets : RJK03B8DPA

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact