RJH60V1BDPP-M0 Datasheet PDF - Renesas

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RJH60V1BDPP-M0
Renesas

Part Number RJH60V1BDPP-M0
Description IGBT
Page 10 Pages


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Preliminary Datasheet
RJH60V1BDPP-M0
600V - 8A - IGBT
Application: Inverter
R07DS0759EJ0100
Rev.1.00
May 25, 2011
Features
Short circuit withstand time (6 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
1. Gate
2. Collector
G 3. Emitter
www.DataSheet.net/
E
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iD(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
16
8
32
8
32
30
4.1
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0759EJ0100 Rev.1.00
May 25, 2011
Page 1 of 9
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RJH60V1BDPP-M0
Preliminary
Electrical Characteristics
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V(BR)CES
ICES / IR
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
tsc
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
VF
trr
Qrr
Irr
Min Typ Max
600 — —
——5
— — ±1
5.5 — 7.5
— 1.6 2.2
— 2.2 —
— 300 —
— 27 —
— 12 —
— 19 —
— 3.5 —
— 11 —
— 30 —
— 12 —
— 55 —
— 110 —
— 0.017 —
— 0.11 —
— 0.13 —
3 6—
2.5
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25
— 0.01
— 1.0
(Ta = 25°C)
Unit Test Conditions
VIC =10 A, VGE = 0
A VCE = 600 V, VGE = 0
A VGE = ±30 V, VCE = 0
V VCE = 10 V, IC = 1 mA
V IC = 8 A, VGE = 15 V Note3
V IC =16 A, VGE = 15 V Note3
pF VCE = 25 V
pF VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 8 A
ns VCC = 300 V
ns VGE = 15 V
ns IC = 8 A
ns Rg = 5 
mJ(Inductive load)
mJ
mJ
s Tc = 100 C
VGE 360 V, VGE = 15 V
V IF = 8 A Note3
ns IF = 8 A
C diF/dt = 100 A/s
A
R07DS0759EJ0100 Rev.1.00
May 25, 2011
Page 2 of 9
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RJH60V1BDPP-M0
Main Characteristics
Collector Dissipation vs.
Case Temperature
40
30
20
10
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Preliminary
Maximum DC Collector Current vs.
Case Temperature
20
16
12
8
4
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
PW
10
100 μs
= 10 μs
1
0.1
Tc = 25°C
Single pulse
0.01
1 10
100 1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
32
Tc = 25°C
Pulse Test
15 V
24
12 V
16
8 10 V
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
Turn-off Safe Operation Area
50
40
30
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20
10
0
0 200 400 600 800
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
32
Tc = 150°C
Pulse Test
24
15 V
16 12 V
8 10 V
VGE = 8 V
0
012345
Collector to Emitter Voltage VCE (V)
R07DS0759EJ0100 Rev.1.00
May 25, 2011
Page 3 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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RJH60V1BDPP-M0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
3
IC = 16 A
2
8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
40
VCE = 10 V
Pulse Test
30
Tc = 25°C
20 150°C
10
0
0 4 8 12 16 20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8 IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25 0 25
50
75 100 125 150
Case Temparature Tc (°C)
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150°C
Pulse Test
4
3
IC = 16 A
2 8A
1
8 10 12 14 16 18 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
4.0
VGE = 15 V
3.5 Pulse Test
3.0
IC = 16 A
2.5
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2.0
1.5
8A
1.0
25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
Frequency Characteristics (Typical)
6
5
0
Collector current wave
4 (Square wave)
3
2
1 Tj = 12C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
0
1 10 100
Frequency f (kHz)
1000
R07DS0759EJ0100 Rev.1.00
May 25, 2011
Page 4 of 9
Datasheet pdf - http://www.DataSheet4U.co.kr/



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